Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer

C. H. Park, K. H. Lee, B. H. Lee, Myung M. Sung, Seongil Im

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer and thin Al2O3 buffer layers. When our memory TFT has a thin Al2O3 layer inserted between P(VDF-TrFE) and ZnO channel: 5 nm, 10 nm and 20 nm. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with high field effect mobilities of 0.6-1 cm2/Vs. The device with the Al2O3 layer shows much longer retention properties over 104 s than the other without buffer. Depending on the thickness of buffer, our NVMTFT displays maximum memory window of ∼20 V and also exhibits WR-ER current ratio of 4×102.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1185-1186
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

Fingerprint

Thin film transistors
Buffer layers
Ferroelectric materials
Data storage equipment
Polymers
Fabrication
Glass
Electric potential
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Park, C. H., Lee, K. H., Lee, B. H., Sung, M. M., & Im, S. (2010). Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1185-1186). [5424966] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424966
Park, C. H. ; Lee, K. H. ; Lee, B. H. ; Sung, Myung M. ; Im, Seongil. / Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 1185-1186 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).
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Park, CH, Lee, KH, Lee, BH, Sung, MM & Im, S 2010, Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424966, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1185-1186, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424966

Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer. / Park, C. H.; Lee, K. H.; Lee, B. H.; Sung, Myung M.; Im, Seongil.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1185-1186 5424966 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Park CH, Lee KH, Lee BH, Sung MM, Im S. Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1185-1186. 5424966. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424966