Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates

Wei Wang, Kang Lib Kim, Suk Man Cho, Ju Han Lee, Cheolmin Park

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Organic field effect transistor based nonvolatile memory (OFET-NVM) with semiconducting nanofloating gates offers additional benefits over OFET-NVMs with conventional metallic floating gates due to the facile controllability of charge storage based on the energetic structure of the floating gate. In particular, an all-in-one tunneling and floating-gate layer in which the semiconducting polymer nanodomains are self-assembled in the dielectric tunneling layer is promising. In this study, we utilize crystals of a p-type semiconducting polymer in which the crystalline lamellae of the polymer are spontaneously developed and embedded in the tunneling matrix as the nanofloating gate. The widths and lengths of the polymer nanodomains are approximately 20 nm and a few hundred nanometers, respectively. An OFET-NVM containing the crystalline nanofloating gates exhibits memory performance with a large memory window of 10 V, programming/erasing switching endurance for over 500 cycles, and a long retention time of 5000 s. Moreover, the device performance is improved by comixing with an n-type semiconductor; thus, the solution-processed p- and n-type double floating gates capable of storing both holes and electrons allow for the multilevel operation of our OFET-NVM. Four highly reliable levels (two bits per cell) of charge trapping and detrapping are achieved using this OFET-NVM by accurately choosing the programming/erasing voltages.

Original languageEnglish
Pages (from-to)33863-33873
Number of pages11
JournalACS Applied Materials and Interfaces
Volume8
Issue number49
DOIs
Publication statusPublished - 2016 Dec 14

Fingerprint

Semiconducting polymers
Organic field effect transistors
Transistors
Data storage equipment
Computer programming
Polymers
Crystalline materials
Charge trapping
Controllability
Durability
Semiconductor materials
Crystals
Electrons
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Wang, Wei ; Kim, Kang Lib ; Cho, Suk Man ; Lee, Ju Han ; Park, Cheolmin. / Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates. In: ACS Applied Materials and Interfaces. 2016 ; Vol. 8, No. 49. pp. 33863-33873.
@article{02682e598965476593143fd1f6aa8e2c,
title = "Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates",
abstract = "Organic field effect transistor based nonvolatile memory (OFET-NVM) with semiconducting nanofloating gates offers additional benefits over OFET-NVMs with conventional metallic floating gates due to the facile controllability of charge storage based on the energetic structure of the floating gate. In particular, an all-in-one tunneling and floating-gate layer in which the semiconducting polymer nanodomains are self-assembled in the dielectric tunneling layer is promising. In this study, we utilize crystals of a p-type semiconducting polymer in which the crystalline lamellae of the polymer are spontaneously developed and embedded in the tunneling matrix as the nanofloating gate. The widths and lengths of the polymer nanodomains are approximately 20 nm and a few hundred nanometers, respectively. An OFET-NVM containing the crystalline nanofloating gates exhibits memory performance with a large memory window of 10 V, programming/erasing switching endurance for over 500 cycles, and a long retention time of 5000 s. Moreover, the device performance is improved by comixing with an n-type semiconductor; thus, the solution-processed p- and n-type double floating gates capable of storing both holes and electrons allow for the multilevel operation of our OFET-NVM. Four highly reliable levels (two bits per cell) of charge trapping and detrapping are achieved using this OFET-NVM by accurately choosing the programming/erasing voltages.",
author = "Wei Wang and Kim, {Kang Lib} and Cho, {Suk Man} and Lee, {Ju Han} and Cheolmin Park",
year = "2016",
month = "12",
day = "14",
doi = "10.1021/acsami.6b12376",
language = "English",
volume = "8",
pages = "33863--33873",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "49",

}

Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates. / Wang, Wei; Kim, Kang Lib; Cho, Suk Man; Lee, Ju Han; Park, Cheolmin.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 49, 14.12.2016, p. 33863-33873.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates

AU - Wang, Wei

AU - Kim, Kang Lib

AU - Cho, Suk Man

AU - Lee, Ju Han

AU - Park, Cheolmin

PY - 2016/12/14

Y1 - 2016/12/14

N2 - Organic field effect transistor based nonvolatile memory (OFET-NVM) with semiconducting nanofloating gates offers additional benefits over OFET-NVMs with conventional metallic floating gates due to the facile controllability of charge storage based on the energetic structure of the floating gate. In particular, an all-in-one tunneling and floating-gate layer in which the semiconducting polymer nanodomains are self-assembled in the dielectric tunneling layer is promising. In this study, we utilize crystals of a p-type semiconducting polymer in which the crystalline lamellae of the polymer are spontaneously developed and embedded in the tunneling matrix as the nanofloating gate. The widths and lengths of the polymer nanodomains are approximately 20 nm and a few hundred nanometers, respectively. An OFET-NVM containing the crystalline nanofloating gates exhibits memory performance with a large memory window of 10 V, programming/erasing switching endurance for over 500 cycles, and a long retention time of 5000 s. Moreover, the device performance is improved by comixing with an n-type semiconductor; thus, the solution-processed p- and n-type double floating gates capable of storing both holes and electrons allow for the multilevel operation of our OFET-NVM. Four highly reliable levels (two bits per cell) of charge trapping and detrapping are achieved using this OFET-NVM by accurately choosing the programming/erasing voltages.

AB - Organic field effect transistor based nonvolatile memory (OFET-NVM) with semiconducting nanofloating gates offers additional benefits over OFET-NVMs with conventional metallic floating gates due to the facile controllability of charge storage based on the energetic structure of the floating gate. In particular, an all-in-one tunneling and floating-gate layer in which the semiconducting polymer nanodomains are self-assembled in the dielectric tunneling layer is promising. In this study, we utilize crystals of a p-type semiconducting polymer in which the crystalline lamellae of the polymer are spontaneously developed and embedded in the tunneling matrix as the nanofloating gate. The widths and lengths of the polymer nanodomains are approximately 20 nm and a few hundred nanometers, respectively. An OFET-NVM containing the crystalline nanofloating gates exhibits memory performance with a large memory window of 10 V, programming/erasing switching endurance for over 500 cycles, and a long retention time of 5000 s. Moreover, the device performance is improved by comixing with an n-type semiconductor; thus, the solution-processed p- and n-type double floating gates capable of storing both holes and electrons allow for the multilevel operation of our OFET-NVM. Four highly reliable levels (two bits per cell) of charge trapping and detrapping are achieved using this OFET-NVM by accurately choosing the programming/erasing voltages.

UR - http://www.scopus.com/inward/record.url?scp=85006247312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85006247312&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b12376

DO - 10.1021/acsami.6b12376

M3 - Article

VL - 8

SP - 33863

EP - 33873

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 49

ER -