Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Hyun Seop Kim, Sang Woo Han, Won Ho Jang, Chun Hyung Cho, Kwang Seok Seo, Jungwoo Oh, Ho Young Cha

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Abstract

We have developed a silicon oxynitride (SiON) deposition process using a plasma-enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal-insulator-semiconductor field-effect transistors (MISFETs). The optimized SiON film had a relative dielectric constant of 5.3 and a breakdown field of 12MV/cm. A normally-off GaN-on-Si MISFET fabricated with a 33-nm SiON gate dielectric exhibited a threshold voltage of ∼2 V, an ON-resistance of 7.85Ω·cm2, and a breakdown voltage of 640 V at the OFF-state current density of 1 μA/mm. The extracted interface trap density was 1×1012 cm-2·eV-1 at Ec - Et = 0.442 eV, which resulted in negligible hysteresis and excellent dynamic characteristics.

Original languageEnglish
Article number7959555
Pages (from-to)1090-1093
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number8
DOIs
Publication statusPublished - 2017 Aug

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kim, H. S., Han, S. W., Jang, W. H., Cho, C. H., Seo, K. S., Oh, J., & Cha, H. Y. (2017). Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric. IEEE Electron Device Letters, 38(8), 1090-1093. [7959555]. https://doi.org/10.1109/LED.2017.2720719