Novel capacitorless single-transistor charge-trap dram (1T CT DRAM) utilizing electrons

M. Günhan Ertosun, Kwan Yong Lim, Chanro Park, Jungwoo Oh, Paul Kirsch, Krishna C. Saraswat

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

For the first time, we propose and experimentally demonstrate a novel single-transistor(1T) DRAM: Capacitorless Single-Transistor Charge-Trap DRAM (1T CT DRAM). The memory operation is obtained by engineering the body of the transistor with CTs by creating intentional electron-trapping zones. This memory makes use of charge traps and uses the existence or absence of electrons in its body instead of holes that are conventionally used in 1T DRAMs whose operation depends on floating-body effects. The DRAM operation is experimentally demonstrated.

Original languageEnglish
Article number5438751
Pages (from-to)405-407
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number5
DOIs
Publication statusPublished - 2010 May 1

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Dynamic random access storage
Transistors
Electrons
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ertosun, M. Günhan ; Lim, Kwan Yong ; Park, Chanro ; Oh, Jungwoo ; Kirsch, Paul ; Saraswat, Krishna C. / Novel capacitorless single-transistor charge-trap dram (1T CT DRAM) utilizing electrons. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 5. pp. 405-407.
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Novel capacitorless single-transistor charge-trap dram (1T CT DRAM) utilizing electrons. / Ertosun, M. Günhan; Lim, Kwan Yong; Park, Chanro; Oh, Jungwoo; Kirsch, Paul; Saraswat, Krishna C.

In: IEEE Electron Device Letters, Vol. 31, No. 5, 5438751, 01.05.2010, p. 405-407.

Research output: Contribution to journalArticle

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