Abstract
A homojunction-structured oxide phototransistor based on a mechano-chemically treated indium-gallium-zinc oxide (IGZO) absorption layer is reported. Through this novel and facile mechano-chemical treatment, mechanical removal of the cellophane adhesive tape induces reactive radicals and organic compounds on the sputtered IGZO film surface. Surface modification, following the mechano-chemical treatment, caused porous sites in the solution-processed IGZO film, which can give rise to a homojunction-porous IGZO (HPI) layer and generate sub-gap states from oxygen-related defects. These intentionally generated sub-gap states played a key role in photoelectron generation under illumination with relatively long-wavelength visible light despite the wide band gap of IGZO (>3.0 eV). Compared with conventional IGZO phototransistors, our HPI phototransistor displayed outstanding optoelectronic characteristics and sensitivity; we measured a threshold voltage (Vth) shift from 3.64 to -6.27 V and an on/off current ratio shift from 4.21 × 1010 to 4.92 × 102 under illumination with a 532 nm green light of 10 mW/mm2 intensity and calculated a photosensitivity of 1.16 × 108. The remarkable optoelectronic characteristics and high optical transparency suggest optical sensor applications.
| Original language | English |
|---|---|
| Pages (from-to) | 35981-35989 |
| Number of pages | 9 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 13 |
| Issue number | 30 |
| DOIs | |
| Publication status | Published - 2021 Aug 4 |
Bibliographical note
Funding Information:This work was supported by the Technology Innovation Program (20010371, Development of 4K level flexible display device and panel technology by the inkjet pixel printing method) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).
Publisher Copyright:
© 2021 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)