Novel Ni germanide technology with co-sputtering of Ni and Pt for thermally stable Ge MOSFETs on Ge-on-Si substrate

Min Ho Kang, Se Kyung Oh, Hong Sik Shin, Jung Ho Yoo, Ga Won Lee, Jin Suk Wang, Jung Woo Oh, Prashant Majhi, Raj Jammy, Hi Deok Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Co-sputtering of Ni and Pt was proposed for thermal stable Ge MOSFETs on a Ge-on-Si substrate. The thermal stability of Ni germanide was considerably improved compared to the pure Ni germanide by the co-sputtering of Pt along with Ni, because Pt atoms distributed uniformly in the Ni germanide layer, which suppressed the agglomeration of Ni germanide. Therefore, the proposed Ni-Pt co-sputtering method is promising for high performance Ge MOSFET applications.

Original languageEnglish
Title of host publication2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
Publication statusPublished - 2010 Oct 22
Event2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
Duration: 2010 Jun 132010 Jun 14

Publication series

Name2010 Silicon Nanoelectronics Workshop, SNW 2010

Other

Other2010 15th Silicon Nanoelectronics Workshop, SNW 2010
CountryUnited States
CityHonolulu, HI
Period10/6/1310/6/14

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Kang, M. H., Oh, S. K., Shin, H. S., Yoo, J. H., Lee, G. W., Wang, J. S., Woo Oh, J., Majhi, P., Jammy, R., & Lee, H. D. (2010). Novel Ni germanide technology with co-sputtering of Ni and Pt for thermally stable Ge MOSFETs on Ge-on-Si substrate. In 2010 Silicon Nanoelectronics Workshop, SNW 2010 [5562558] (2010 Silicon Nanoelectronics Workshop, SNW 2010). https://doi.org/10.1109/SNW.2010.5562558