Boron (B) separation from photovoltaic silicon (Si) remains a research challenge in the recycling field. In this study, a novel B-removal process was developed using thermal plasma treatment coupled with steam and hydrogen gases. Experiments were performed on artificially B-doped Si using various plasma conditions of mixed argon (Ar)/steam/hydrogen gases and varied refining time. The B concentration in all of the samples decreased with increasing refining time. The use of the plasma mixed with Ar/steam/hydrogen gases resulted in a significant improvement of the efficiency of B removal compared with the Ar/steam plasma refining. In addition, with increasing steam content in the plasma with mixed Ar/steam/hydrogen gases, the B-removal rates increased.
Bibliographical noteFunding Information:
Acknowledgments: This work was supported by the Nuclear Power Core Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (Grant no. 20141710201690) and Basic Science Research Program (No. 2015R1D1A1A01057311) through the National Research Foundation of Korea and the International Cooperative R&D program (N0001243_Reuse silicon from Photovoltaic Waste) through the Ministry of Trade, Industry and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT).
All Science Journal Classification (ASJC) codes
- Materials Science(all)