Novel robust cell capacitor (leaning exterminated ring type insulator) and new storage node contact (top spacer contact) for 70nm DRAM technology and beyond

J. M. Park, Y. S. Hwang, D. W. Shin, M. Huh, D. H. Kim, H. K. Hwang, H. J. Oh, J. W. Song, N. J. Kang, B. H. Lee, C. J. Yun, M. S. Shim, S. E. Kim, J. Y. Kim, J. M. Kwon, B. J. Park, J. W. Lee, D. I. Kim, M. H. Cho, M. Y. JeongH. J. Kim, H. J. Kim, H. S. Kim, G. Y. Jin, Y. G. Park, Kinam Kim

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4 Citations (Scopus)

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Engineering & Materials Science