Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM

Sung Woong Chung, Sang Tae Ahn, Hyunchul Sohn, Jachun Ku, Sungki Park, Yong Wook Song, Hyo Sik Park, Sang Don Lee

Research output: Contribution to journal › Conference article

9 Citations (Scopus)

Abstract

We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of 1-Gbit DRAM. The trench gap filling capability was increased dramatically by combining high-density plasma (HDP) CVD with flowable oxide CVD. The reduced local stress by flowable oxide in narrow trenches leaded to decrease in junction leakage and gate induced drain leakage (GIDL) current and increase in data retention time of DRAM compared to HDP STI. Therefore, it is concluded that the combination of flowable oxide and HDP oxide is the most promising technology for STI gap filling process of sub-100 nm DRAM technology.

Original languageEnglish
Pages (from-to)233-236
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2002 Dec 1
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 2002 Dec 8 → 2002 Dec 11

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Dynamic random access storage
Oxides
Chemical vapor deposition
isolation
vapor deposition
Plasma density
oxides
plasma density
leakage
Leakage currents
cells

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chung, Sung Woong ; Ahn, Sang Tae ; Sohn, Hyunchul ; Ku, Jachun ; Park, Sungki ; Song, Yong Wook ; Park, Hyo Sik ; Lee, Sang Don. / Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM. In: Technical Digest - International Electron Devices Meeting. 2002 ; pp. 233-236.
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abstract = "We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of 1-Gbit DRAM. The trench gap filling capability was increased dramatically by combining high-density plasma (HDP) CVD with flowable oxide CVD. The reduced local stress by flowable oxide in narrow trenches leaded to decrease in junction leakage and gate induced drain leakage (GIDL) current and increase in data retention time of DRAM compared to HDP STI. Therefore, it is concluded that the combination of flowable oxide and HDP oxide is the most promising technology for STI gap filling process of sub-100 nm DRAM technology.",
author = "Chung, {Sung Woong} and Ahn, {Sang Tae} and Hyunchul Sohn and Jachun Ku and Sungki Park and Song, {Yong Wook} and Park, {Hyo Sik} and Lee, {Sang Don}",
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Chung, SW, Ahn, ST, Sohn, H, Ku, J, Park, S, Song, YW, Park, HS & Lee, SD 2002, 'Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM', Technical Digest - International Electron Devices Meeting, pp. 233-236.

Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM. / Chung, Sung Woong; Ahn, Sang Tae; Sohn, Hyunchul; Ku, Jachun; Park, Sungki; Song, Yong Wook; Park, Hyo Sik; Lee, Sang Don.

In: Technical Digest - International Electron Devices Meeting, 01.12.2002, p. 233-236.

Research output: Contribution to journal › Conference article

TY - JOUR

T1 - Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM

AU - Chung, Sung Woong

AU - Ahn, Sang Tae

AU - Sohn, Hyunchul

AU - Ku, Jachun

AU - Park, Sungki

AU - Song, Yong Wook

AU - Park, Hyo Sik

AU - Lee, Sang Don

PY - 2002/12/1

Y1 - 2002/12/1

N2 - We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of 1-Gbit DRAM. The trench gap filling capability was increased dramatically by combining high-density plasma (HDP) CVD with flowable oxide CVD. The reduced local stress by flowable oxide in narrow trenches leaded to decrease in junction leakage and gate induced drain leakage (GIDL) current and increase in data retention time of DRAM compared to HDP STI. Therefore, it is concluded that the combination of flowable oxide and HDP oxide is the most promising technology for STI gap filling process of sub-100 nm DRAM technology.

AB - We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of 1-Gbit DRAM. The trench gap filling capability was increased dramatically by combining high-density plasma (HDP) CVD with flowable oxide CVD. The reduced local stress by flowable oxide in narrow trenches leaded to decrease in junction leakage and gate induced drain leakage (GIDL) current and increase in data retention time of DRAM compared to HDP STI. Therefore, it is concluded that the combination of flowable oxide and HDP oxide is the most promising technology for STI gap filling process of sub-100 nm DRAM technology.

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M3 - Conference article

SP - 233

EP - 236

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -

Chung SW, Ahn ST, Sohn H, Ku J, Park S, Song YW et al. Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM. Technical Digest - International Electron Devices Meeting. 2002 Dec 1;233-236.

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