Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM

Sung Woong Chung; Sang Tae Ahn; Hyun Chul Sohn; Jachun Ku; Sungki Park; Yong Wook Song; Hyo Sik Park; Sang Don Lee

Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM

Sung Woong Chung, Sang Tae Ahn, Hyun Chul Sohn, Jachun Ku, Sungki Park, Yong Wook Song, Hyo Sik Park, Sang Don Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of 1-Gbit DRAM. The trench gap filling capability was increased dramatically by combining high-density plasma (HDP) CVD with flowable oxide CVD. The reduced local stress by flowable oxide in narrow trenches leaded to decrease in junction leakage and gate induced drain leakage (GIDL) current and increase in data retention time of DRAM compared to HDP STI. Therefore, it is concluded that the combination of flowable oxide and HDP oxide is the most promising technology for STI gap filling process of sub-100 nm DRAM technology.

Original language	English
Pages (from-to)	233-236
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2002
Event	2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States Duration: 2002 Dec 8 → 2002 Dec 11

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{476e518d217b476e8cbf5d586e19f97f,

title = "Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM",

abstract = "We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of 1-Gbit DRAM. The trench gap filling capability was increased dramatically by combining high-density plasma (HDP) CVD with flowable oxide CVD. The reduced local stress by flowable oxide in narrow trenches leaded to decrease in junction leakage and gate induced drain leakage (GIDL) current and increase in data retention time of DRAM compared to HDP STI. Therefore, it is concluded that the combination of flowable oxide and HDP oxide is the most promising technology for STI gap filling process of sub-100 nm DRAM technology.",

author = "Chung, {Sung Woong} and Ahn, {Sang Tae} and Sohn, {Hyun Chul} and Jachun Ku and Sungki Park and Song, {Yong Wook} and Park, {Hyo Sik} and Lee, {Sang Don}",

year = "2002",

language = "English",

pages = "233--236",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Devices Meeting (IEDM) ; Conference date: 08-12-2002 Through 11-12-2002",

}

Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM. / Chung, Sung Woong; Ahn, Sang Tae; Sohn, Hyun Chul; Ku, Jachun; Park, Sungki; Song, Yong Wook; Park, Hyo Sik; Lee, Sang Don.

In: Technical Digest - International Electron Devices Meeting, 2002, p. 233-236.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM

AU - Chung, Sung Woong

AU - Ahn, Sang Tae

AU - Sohn, Hyun Chul

AU - Ku, Jachun

AU - Park, Sungki

AU - Song, Yong Wook

AU - Park, Hyo Sik

AU - Lee, Sang Don

PY - 2002

Y1 - 2002

N2 - We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of 1-Gbit DRAM. The trench gap filling capability was increased dramatically by combining high-density plasma (HDP) CVD with flowable oxide CVD. The reduced local stress by flowable oxide in narrow trenches leaded to decrease in junction leakage and gate induced drain leakage (GIDL) current and increase in data retention time of DRAM compared to HDP STI. Therefore, it is concluded that the combination of flowable oxide and HDP oxide is the most promising technology for STI gap filling process of sub-100 nm DRAM technology.

AB - We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of 1-Gbit DRAM. The trench gap filling capability was increased dramatically by combining high-density plasma (HDP) CVD with flowable oxide CVD. The reduced local stress by flowable oxide in narrow trenches leaded to decrease in junction leakage and gate induced drain leakage (GIDL) current and increase in data retention time of DRAM compared to HDP STI. Therefore, it is concluded that the combination of flowable oxide and HDP oxide is the most promising technology for STI gap filling process of sub-100 nm DRAM technology.

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M3 - Conference article

AN - SCOPUS:0036923302

SP - 233

EP - 236

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - 2002 IEEE International Devices Meeting (IEDM)

Y2 - 8 December 2002 through 11 December 2002

ER -

Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM

Abstract

All Science Journal Classification (ASJC) codes

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