Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM

Sung Woong Chung, Sang Tae Ahn, Hyun Chul Sohn, Jachun Ku, Sungki Park, Yong Wook Song, Hyo Sik Park, Sang Don Lee

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of 1-Gbit DRAM. The trench gap filling capability was increased dramatically by combining high-density plasma (HDP) CVD with flowable oxide CVD. The reduced local stress by flowable oxide in narrow trenches leaded to decrease in junction leakage and gate induced drain leakage (GIDL) current and increase in data retention time of DRAM compared to HDP STI. Therefore, it is concluded that the combination of flowable oxide and HDP oxide is the most promising technology for STI gap filling process of sub-100 nm DRAM technology.

Original languageEnglish
Pages (from-to)233-236
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2002 Dec 1
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 2002 Dec 82002 Dec 11

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chung, S. W., Ahn, S. T., Sohn, H. C., Ku, J., Park, S., Song, Y. W., Park, H. S., & Lee, S. D. (2002). Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM. Technical Digest - International Electron Devices Meeting, 233-236.