The nucleation and growth of SiO2, as a function of surface condition, was investigated using in situ medium-energy ion-scattering analysis. The amount of SiO2 required for saturation on the thermal oxide and on the chemical oxide was found to be 0.75 and 3.84 × 1014 Si/cm2, respectively. The growth of SiO2 on the initial HfO2 surface increased as a function of HfO2 coverage and growth when the HfO2 coverage over 1 monolayer (ML) becomes saturated when the coverage of SiO2 is ∼7 × 1014 Si/cm2, which corresponds to a coverage of 1 ML SiO2. The nucleation of SiO2 greatly depends on the initial surface conditions. In addition, the nucleation of SiO2 has a tendency to become saturated, regardless of the initial surface conditions.
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - 2009|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry