Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique

Younghyun Kim, Yunsu Sung, Jung Tack Yang, Woo Young Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

Original languageEnglish
Title of host publicationHigh-Power Diode Laser Technology XVI
EditorsMark S. Zediker
PublisherSPIE
ISBN (Electronic)9781510615137
DOIs
Publication statusPublished - 2018
EventHigh-Power Diode Laser Technology XVI 2018 - San Francisco, United States
Duration: 2018 Jan 292018 Jan 30

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10514
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceHigh-Power Diode Laser Technology XVI 2018
CountryUnited States
CitySan Francisco
Period18/1/2918/1/30

Bibliographical note

Funding Information:
This work was supported by the Research Fund of High Efficiency Laser Laboratory of Agency for Defense Development of Korea (No.UD160069BD).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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