Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique

Younghyun Kim, Yunsu Sung, Jung Tack Yang, Woo Young Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

Original languageEnglish
Title of host publicationHigh-Power Diode Laser Technology XVI
EditorsMark S. Zediker
PublisherSPIE
ISBN (Electronic)9781510615137
DOIs
Publication statusPublished - 2018 Jan 1
EventHigh-Power Diode Laser Technology XVI 2018 - San Francisco, United States
Duration: 2018 Jan 292018 Jan 30

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10514
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceHigh-Power Diode Laser Technology XVI 2018
CountryUnited States
CitySan Francisco
Period18/1/2918/1/30

Fingerprint

sinking
Laser Diode
High Power
numerical analysis
Semiconductor lasers
Numerical analysis
Numerical Analysis
High Power Diode Laser
Heat
semiconductor lasers
heat
thermal blooming
high power lasers
High power lasers
Substrate
Quantum Well
Cavity
quantum wells
Semiconductor quantum wells
cavities

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kim, Y., Sung, Y., Yang, J. T., & Choi, W. Y. (2018). Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique. In M. S. Zediker (Ed.), High-Power Diode Laser Technology XVI [105140C] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10514). SPIE. https://doi.org/10.1117/12.2288639
Kim, Younghyun ; Sung, Yunsu ; Yang, Jung Tack ; Choi, Woo Young. / Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique. High-Power Diode Laser Technology XVI. editor / Mark S. Zediker. SPIE, 2018. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.",
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Kim, Y, Sung, Y, Yang, JT & Choi, WY 2018, Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique. in MS Zediker (ed.), High-Power Diode Laser Technology XVI., 105140C, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10514, SPIE, High-Power Diode Laser Technology XVI 2018, San Francisco, United States, 18/1/29. https://doi.org/10.1117/12.2288639

Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique. / Kim, Younghyun; Sung, Yunsu; Yang, Jung Tack; Choi, Woo Young.

High-Power Diode Laser Technology XVI. ed. / Mark S. Zediker. SPIE, 2018. 105140C (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10514).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

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Kim Y, Sung Y, Yang JT, Choi WY. Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique. In Zediker MS, editor, High-Power Diode Laser Technology XVI. SPIE. 2018. 105140C. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2288639