Numerical analysis on the mechanical properties of organic thin film transistor

S. C. Lee, D. K. Lee, Y. G. Seol, J. H. Ahn, N. E. Lee, Y. J. Kim

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Abstract

The organic thin film transistor (OTFT) on flexible substrate electroplated electrodes has many advantages as in the fabrication of low cost sensors, e-paper, smart cards, and flexible displays. In this study, we simulated the mechanical and electrical characteristics of the OTFT with various voltage conditions by using COMSOL. The model consisting of a channel, source and drain was employed to investigate the temperature distribution and thermal stress concentration. The channel length is 40 m and the voltage ranged between -20V and -40V. The OTFT was fabricated using pentacene as a semiconducting layer and electroplated Ni as a gate electrode. Mechanical properties of the fabricated OTFT were characterized by thermal stress which was predicted with the result of stress distribution.

Original languageEnglish
Pages (from-to)1471-1474
Number of pages4
JournalModern Physics Letters B
Volume24
Issue number13
DOIs
Publication statusPublished - 2010 May 30

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All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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