Numerical design of sio 2 bridges in stretchable thin film transistors

Byung Jae Kim, Kyung Yea Park, Jong Hyun Ahn, Youn Jea Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

An amorphous indium-gallium-zinc oxide based inverter (a-IGZO inverter) was fabricated. Subsequently, its mechanical characteristics were investigated. A numerical method was adopted to optimize the a-IGZO inverter design. This optimization secured mechanical stability. The curvature at the edge of the SiO 2 pad and the thickness of the indium-tin-oxide (ITO) electrode were accounted for in the models. The new model improved the mechanical stability when it was stretched by a total of 5% of its length along the x-axis and did not exhibit fractures or cracks. In contrast, the referenced model fractured under the same condition. It has been verified by both experiments and simulations that newly designed models obtain mechanical stability.

Original languageEnglish
Article number01AG10
JournalJapanese journal of applied physics
Volume51
Issue number1 PART 2
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Thin film transistors
Mechanical stability
transistors
Indium
gallium oxides
Gallium
thin films
Zinc oxide
zinc oxides
indium
Tin oxides
indium oxides
tin oxides
Numerical methods
cracks
curvature
Cracks
Electrodes
optimization
electrodes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kim, Byung Jae ; Park, Kyung Yea ; Ahn, Jong Hyun ; Kim, Youn Jea. / Numerical design of sio 2 bridges in stretchable thin film transistors. In: Japanese journal of applied physics. 2012 ; Vol. 51, No. 1 PART 2.
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Numerical design of sio 2 bridges in stretchable thin film transistors. / Kim, Byung Jae; Park, Kyung Yea; Ahn, Jong Hyun; Kim, Youn Jea.

In: Japanese journal of applied physics, Vol. 51, No. 1 PART 2, 01AG10, 01.01.2012.

Research output: Contribution to journalArticle

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