Observation of giant persistent photoconductivity on vanadium dioxide thin film device

Gi Yong Lee; Bongjin Simon Mun; Honglyoul Ju

doi:10.1016/j.apmt.2020.100894

Observation of giant persistent photoconductivity on vanadium dioxide thin film device

Gi Yong Lee, Bongjin Simon Mun, Honglyoul Ju

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report a giant persistent photoconductivity (GPPC) phenomenon in VO₂ film device prepared on corning glass substrate. With a single pulse laser irradiation onto the device at bias voltages of 7 V and 8 V, the VO₂ film makes an insulator-to-metal transition with a sharp increase of photo current. The photo current remained at a highly conductive state for long period, e.g. the photo current for VO₂ device was decreased only ~1% in one day. The GPPC was found within the limit of critical voltages of the hysteresis loop in voltage vs current curve of the device. High speed time-current measurements on the device with a 20 ms single pulse laser irradiation revealed that the onset of abrupt photo current occurs in less than 1 ms time scale. The GPPC in VO₂ device can contribute in realizing ultrafast optical remote control of advanced electronic devices i.e. optical memories, displays, and remote ultrafast switching devices.

Original language	English
Article number	100894
Journal	Applied Materials Today
Volume	22
DOIs	https://doi.org/10.1016/j.apmt.2020.100894
Publication status	Published - 2021 Mar

Bibliographical note

Funding Information:
H. L. Ju and G. Y. Lee would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean government (MOE) ( NRF-2020R1F1A1061298 , NRF-2018R1A6A3A01012528 , NRF-2019R1I1A1A01041427 ). B. S. Mun would like to acknowledge the supports from the National Research Foundation of Korea ( NRF-2015R1A5A1009962 , NRF-2019R1A2C2008052 ) and the GIST Research Institute Grant funded by the Gwangju Institute of Science and Technology (GIST) 2020.

Publisher Copyright:
© 2020 The Author(s)

All Science Journal Classification (ASJC) codes

Materials Science(all)

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title = "Observation of giant persistent photoconductivity on vanadium dioxide thin film device",

abstract = "We report a giant persistent photoconductivity (GPPC) phenomenon in VO2 film device prepared on corning glass substrate. With a single pulse laser irradiation onto the device at bias voltages of 7 V and 8 V, the VO2 film makes an insulator-to-metal transition with a sharp increase of photo current. The photo current remained at a highly conductive state for long period, e.g. the photo current for VO2 device was decreased only ~1% in one day. The GPPC was found within the limit of critical voltages of the hysteresis loop in voltage vs current curve of the device. High speed time-current measurements on the device with a 20 ms single pulse laser irradiation revealed that the onset of abrupt photo current occurs in less than 1 ms time scale. The GPPC in VO2 device can contribute in realizing ultrafast optical remote control of advanced electronic devices i.e. optical memories, displays, and remote ultrafast switching devices.",

author = "Lee, {Gi Yong} and Mun, {Bongjin Simon} and Honglyoul Ju",

note = "Funding Information: H. L. Ju and G. Y. Lee would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean government (MOE) ( NRF-2020R1F1A1061298 , NRF-2018R1A6A3A01012528 , NRF-2019R1I1A1A01041427 ). B. S. Mun would like to acknowledge the supports from the National Research Foundation of Korea ( NRF-2015R1A5A1009962 , NRF-2019R1A2C2008052 ) and the GIST Research Institute Grant funded by the Gwangju Institute of Science and Technology (GIST) 2020. Publisher Copyright: {\textcopyright} 2020 The Author(s)",

year = "2021",

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doi = "10.1016/j.apmt.2020.100894",

language = "English",

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AU - Lee, Gi Yong

AU - Mun, Bongjin Simon

AU - Ju, Honglyoul

N1 - Funding Information: H. L. Ju and G. Y. Lee would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean government (MOE) ( NRF-2020R1F1A1061298 , NRF-2018R1A6A3A01012528 , NRF-2019R1I1A1A01041427 ). B. S. Mun would like to acknowledge the supports from the National Research Foundation of Korea ( NRF-2015R1A5A1009962 , NRF-2019R1A2C2008052 ) and the GIST Research Institute Grant funded by the Gwangju Institute of Science and Technology (GIST) 2020. Publisher Copyright: © 2020 The Author(s)

PY - 2021/3

Y1 - 2021/3

N2 - We report a giant persistent photoconductivity (GPPC) phenomenon in VO2 film device prepared on corning glass substrate. With a single pulse laser irradiation onto the device at bias voltages of 7 V and 8 V, the VO2 film makes an insulator-to-metal transition with a sharp increase of photo current. The photo current remained at a highly conductive state for long period, e.g. the photo current for VO2 device was decreased only ~1% in one day. The GPPC was found within the limit of critical voltages of the hysteresis loop in voltage vs current curve of the device. High speed time-current measurements on the device with a 20 ms single pulse laser irradiation revealed that the onset of abrupt photo current occurs in less than 1 ms time scale. The GPPC in VO2 device can contribute in realizing ultrafast optical remote control of advanced electronic devices i.e. optical memories, displays, and remote ultrafast switching devices.

AB - We report a giant persistent photoconductivity (GPPC) phenomenon in VO2 film device prepared on corning glass substrate. With a single pulse laser irradiation onto the device at bias voltages of 7 V and 8 V, the VO2 film makes an insulator-to-metal transition with a sharp increase of photo current. The photo current remained at a highly conductive state for long period, e.g. the photo current for VO2 device was decreased only ~1% in one day. The GPPC was found within the limit of critical voltages of the hysteresis loop in voltage vs current curve of the device. High speed time-current measurements on the device with a 20 ms single pulse laser irradiation revealed that the onset of abrupt photo current occurs in less than 1 ms time scale. The GPPC in VO2 device can contribute in realizing ultrafast optical remote control of advanced electronic devices i.e. optical memories, displays, and remote ultrafast switching devices.

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Observation of giant persistent photoconductivity on vanadium dioxide thin film device

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