Observation of hysteretic magnetoresistance in Mn-doped GaN nanowires with the mesoscopic Co and TiAu contacts

Seong Eok Han, Hwangyou Oh, Ju Jin Kim, Han Kyu Seong, Heon Jin Choi

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18 Citations (Scopus)

Abstract

We have studied the spin dependent tunneling properties of Mn-doped GaN nanowires with ferromagnetic Co contacts. The magnetoresistances were measured between two ferromagnetic Co electrodes, or Co and TiAu electrodes through Mn-doped GaN nanowires. The magnetoresistances of nanowire with the Co electrode indicate hysteretic behaviors, which are commonly observed in tunnel magnetoresistance devices. The magnetoresistance ratio increases from -0.6% at 20 K to -9.4% at 1.74 K. It is believed that the hysteretic magnetoresistances originate from the tunnel magnetoresistance effect between the ferromagnetic phases of nanowire and Co electrode.

Original languageEnglish
Article number062102
JournalApplied Physics Letters
Volume87
Issue number6
DOIs
Publication statusPublished - 2005 Sep 5

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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