We have studied the spin dependent tunneling properties of Mn-doped GaN nanowires with ferromagnetic Co contacts. The magnetoresistances were measured between two ferromagnetic Co electrodes, or Co and TiAu electrodes through Mn-doped GaN nanowires. The magnetoresistances of nanowire with the Co electrode indicate hysteretic behaviors, which are commonly observed in tunnel magnetoresistance devices. The magnetoresistance ratio increases from -0.6% at 20 K to -9.4% at 1.74 K. It is believed that the hysteretic magnetoresistances originate from the tunnel magnetoresistance effect between the ferromagnetic phases of nanowire and Co electrode.
Bibliographical noteFunding Information:
This work was supported by the electron Spin Science Center at POSTECH, NFGM project, and Korea-China Cooperation Program supported by KOSEF, Korea.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)