Abstract
We have studied the spin dependent tunneling properties of Mn-doped GaN nanowires with ferromagnetic Co contacts. The magnetoresistances were measured between two ferromagnetic Co electrodes, or Co and TiAu electrodes through Mn-doped GaN nanowires. The magnetoresistances of nanowire with the Co electrode indicate hysteretic behaviors, which are commonly observed in tunnel magnetoresistance devices. The magnetoresistance ratio increases from -0.6% at 20 K to -9.4% at 1.74 K. It is believed that the hysteretic magnetoresistances originate from the tunnel magnetoresistance effect between the ferromagnetic phases of nanowire and Co electrode.
| Original language | English |
|---|---|
| Article number | 062102 |
| Journal | Applied Physics Letters |
| Volume | 87 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2005 Sep 5 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Observation of hysteretic magnetoresistance in Mn-doped GaN nanowires with the mesoscopic Co and TiAu contacts. / Han, Seong Eok; Oh, Hwangyou; Kim, Ju Jin; Seong, Han Kyu; Choi, Heon-Jin.
In: Applied Physics Letters, Vol. 87, No. 6, 062102, 05.09.2005.Research output: Contribution to journal › Article
TY - JOUR
T1 - Observation of hysteretic magnetoresistance in Mn-doped GaN nanowires with the mesoscopic Co and TiAu contacts
AU - Han, Seong Eok
AU - Oh, Hwangyou
AU - Kim, Ju Jin
AU - Seong, Han Kyu
AU - Choi, Heon-Jin
PY - 2005/9/5
Y1 - 2005/9/5
N2 - We have studied the spin dependent tunneling properties of Mn-doped GaN nanowires with ferromagnetic Co contacts. The magnetoresistances were measured between two ferromagnetic Co electrodes, or Co and TiAu electrodes through Mn-doped GaN nanowires. The magnetoresistances of nanowire with the Co electrode indicate hysteretic behaviors, which are commonly observed in tunnel magnetoresistance devices. The magnetoresistance ratio increases from -0.6% at 20 K to -9.4% at 1.74 K. It is believed that the hysteretic magnetoresistances originate from the tunnel magnetoresistance effect between the ferromagnetic phases of nanowire and Co electrode.
AB - We have studied the spin dependent tunneling properties of Mn-doped GaN nanowires with ferromagnetic Co contacts. The magnetoresistances were measured between two ferromagnetic Co electrodes, or Co and TiAu electrodes through Mn-doped GaN nanowires. The magnetoresistances of nanowire with the Co electrode indicate hysteretic behaviors, which are commonly observed in tunnel magnetoresistance devices. The magnetoresistance ratio increases from -0.6% at 20 K to -9.4% at 1.74 K. It is believed that the hysteretic magnetoresistances originate from the tunnel magnetoresistance effect between the ferromagnetic phases of nanowire and Co electrode.
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U2 - 10.1063/1.2009832
DO - 10.1063/1.2009832
M3 - Article
AN - SCOPUS:23944480904
VL - 87
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
M1 - 062102
ER -