Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition

Byongju Kim; Hyunchul Jang; Dae Seop Byeon; Sangmo Koo; Dae Hong Ko

doi:10.1109/ISTDM.2014.6874662

Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition

Byongju Kim, Hyunchul Jang, Dae Seop Byeon, Sangmo Koo, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B₂H₆ flow rate.

Original language	English
Title of host publication	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Publisher	IEEE Computer Society
Pages	77-78
Number of pages	2
ISBN (Print)	9781479954285
DOIs	https://doi.org/10.1109/ISTDM.2014.6874662
Publication status	Published - 2014
Event	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore Duration: 2014 Jun 2 → 2014 Jun 4

Publication series

Name	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Country	Singapore
City	Singapore
Period	14/6/2 → 14/6/4

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2014.6874662

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Kim, B., Jang, H., Byeon, D. S., Koo, S., & Ko, D. H. (2014). Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 77-78). [6874662] (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874662

Kim, Byongju ; Jang, Hyunchul ; Byeon, Dae Seop ; Koo, Sangmo ; Ko, Dae Hong. / Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. pp. 77-78 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

@inproceedings{e490fb474bec44bd84fc7900773ac19b,

title = "Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition",

abstract = "In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.",

author = "Byongju Kim and Hyunchul Jang and Byeon, {Dae Seop} and Sangmo Koo and Ko, {Dae Hong}",

year = "2014",

doi = "10.1109/ISTDM.2014.6874662",

language = "English",

isbn = "9781479954285",

series = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",

publisher = "IEEE Computer Society",

pages = "77--78",

booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",

address = "United States",

note = "7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",

}

Kim, B, Jang, H, Byeon, DS, Koo, S & Ko, DH 2014, Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874662, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, IEEE Computer Society, pp. 77-78, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 14/6/2. https://doi.org/10.1109/ISTDM.2014.6874662

Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. / Kim, Byongju; Jang, Hyunchul; Byeon, Dae Seop; Koo, Sangmo; Ko, Dae Hong.

2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 77-78 6874662 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.

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Kim B, Jang H, Byeon DS, Koo S, Ko DH. Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 77-78. 6874662. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). https://doi.org/10.1109/ISTDM.2014.6874662