TY - GEN
T1 - Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition
AU - Kim, Byongju
AU - Jang, Hyunchul
AU - Byeon, Dae Seop
AU - Koo, Sangmo
AU - Ko, Dae Hong
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.
AB - In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.
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U2 - 10.1109/ISTDM.2014.6874662
DO - 10.1109/ISTDM.2014.6874662
M3 - Conference contribution
AN - SCOPUS:84906654622
SN - 9781479954285
T3 - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
SP - 77
EP - 78
BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PB - IEEE Computer Society
T2 - 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Y2 - 2 June 2014 through 4 June 2014
ER -