Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition

Byongju Kim, Hyunchul Jang, Dae Seop Byeon, Sangmo Koo, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages77-78
Number of pages2
ISBN (Print)9781479954285
DOIs
Publication statusPublished - 2014 Jan 1
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: 2014 Jun 22014 Jun 4

Publication series

Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
CountrySingapore
CitySingapore
Period14/6/214/6/4

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Kim, B., Jang, H., Byeon, D. S., Koo, S., & Ko, D. H. (2014). Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 77-78). [6874662] (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874662