Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition

Byongju Kim, Hyunchul Jang, Dae Seop Byeon, Sangmo Koo, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages77-78
Number of pages2
ISBN (Print)9781479954285
DOIs
Publication statusPublished - 2014 Jan 1
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: 2014 Jun 22014 Jun 4

Publication series

Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
CountrySingapore
CitySingapore
Period14/6/214/6/4

Fingerprint

D region
Ultrahigh vacuum
Chemical vapor deposition
Flow rate
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, B., Jang, H., Byeon, D. S., Koo, S., & Ko, D. H. (2014). Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 77-78). [6874662] (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874662
Kim, Byongju ; Jang, Hyunchul ; Byeon, Dae Seop ; Koo, Sangmo ; Ko, Dae Hong. / Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. pp. 77-78 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).
@inproceedings{e490fb474bec44bd84fc7900773ac19b,
title = "Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition",
abstract = "In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.",
author = "Byongju Kim and Hyunchul Jang and Byeon, {Dae Seop} and Sangmo Koo and Ko, {Dae Hong}",
year = "2014",
month = "1",
day = "1",
doi = "10.1109/ISTDM.2014.6874662",
language = "English",
isbn = "9781479954285",
series = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
publisher = "IEEE Computer Society",
pages = "77--78",
booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
address = "United States",

}

Kim, B, Jang, H, Byeon, DS, Koo, S & Ko, DH 2014, Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874662, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, IEEE Computer Society, pp. 77-78, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 14/6/2. https://doi.org/10.1109/ISTDM.2014.6874662

Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. / Kim, Byongju; Jang, Hyunchul; Byeon, Dae Seop; Koo, Sangmo; Ko, Dae Hong.

2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 77-78 6874662 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition

AU - Kim, Byongju

AU - Jang, Hyunchul

AU - Byeon, Dae Seop

AU - Koo, Sangmo

AU - Ko, Dae Hong

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.

AB - In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.

UR - http://www.scopus.com/inward/record.url?scp=84906654622&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906654622&partnerID=8YFLogxK

U2 - 10.1109/ISTDM.2014.6874662

DO - 10.1109/ISTDM.2014.6874662

M3 - Conference contribution

AN - SCOPUS:84906654622

SN - 9781479954285

T3 - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

SP - 77

EP - 78

BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

PB - IEEE Computer Society

ER -

Kim B, Jang H, Byeon DS, Koo S, Ko DH. Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 77-78. 6874662. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). https://doi.org/10.1109/ISTDM.2014.6874662