Abstract
In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.
| Original language | English |
|---|---|
| Title of host publication | 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 |
| Publisher | IEEE Computer Society |
| Pages | 77-78 |
| Number of pages | 2 |
| ISBN (Print) | 9781479954285 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
| Event | 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore Duration: 2014 Jun 2 → 2014 Jun 4 |
Publication series
| Name | 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 |
|---|
Other
| Other | 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 |
|---|---|
| Country | Singapore |
| City | Singapore |
| Period | 14/6/2 → 14/6/4 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition. / Kim, Byongju; Jang, Hyunchul; Byeon, Dae Seop; Koo, Sangmo; Ko, Dae Hong.
2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 77-78 6874662 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition
AU - Kim, Byongju
AU - Jang, Hyunchul
AU - Byeon, Dae Seop
AU - Koo, Sangmo
AU - Ko, Dae Hong
PY - 2014/1/1
Y1 - 2014/1/1
N2 - In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.
AB - In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.
UR - http://www.scopus.com/inward/record.url?scp=84906654622&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906654622&partnerID=8YFLogxK
U2 - 10.1109/ISTDM.2014.6874662
DO - 10.1109/ISTDM.2014.6874662
M3 - Conference contribution
AN - SCOPUS:84906654622
SN - 9781479954285
T3 - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
SP - 77
EP - 78
BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PB - IEEE Computer Society
ER -