Observation of in situ oxidation dynamics of vanadium thin film with ambient pressure X-ray photoemission spectroscopy

Geonhwa Kim, Joonseok Yoon, Hyukjun Yang, Hojoon Lim, Hyungcheol Lee, Changkil Jeong, Hyungjoong Yun, Beomgyun Jeong, Ethan Crumlin, Jouhahn Lee, Jaeyoung Lee, Honglyoul Ju, Bongjin Simon Mun

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The evolution of oxidation/reduction states of vanadium oxide thin film was monitored in situ as a function of oxygen pressure and temperature via ambient pressure X-ray photoemission spectroscopy. Spectra analysis showed that VO2 can be grown at a relatively low temperature, T ∼ 523 K, and that V2O5 oxide develops rapidly at elevated oxygen pressure. Raman spectroscopy was applied to confirm the formation of VO2 oxide inside of the film. In addition, the temperature-dependent resistivity measurement on the grown thin film, e.g., 20 nm exhibited a desirable metal-insulator transition of VO2 with a resistivity change of ∼1.5 × 103 times at 349.3 K, displaying typical characteristics of thick VO2 film, e.g., 100 nm thick. Our results not only provide important spectroscopic information for the fabrication of vanadium oxides, but also show that high quality VO2 films can be formed at relatively low temperature, which is highly critical for engineering oxide film for heat-sensitive electronic devices.

Original languageEnglish
Article number205305
JournalJournal of Applied Physics
Volume120
Issue number20
DOIs
Publication statusPublished - 2016 Nov 28

Fingerprint

vanadium
photoelectric emission
vanadium oxides
oxidation
thin films
spectroscopy
electrical resistivity
x rays
oxides
oxygen
ambient temperature
thick films
spectrum analysis
oxide films
Raman spectroscopy
insulators
engineering
heat
fabrication
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, Geonhwa ; Yoon, Joonseok ; Yang, Hyukjun ; Lim, Hojoon ; Lee, Hyungcheol ; Jeong, Changkil ; Yun, Hyungjoong ; Jeong, Beomgyun ; Crumlin, Ethan ; Lee, Jouhahn ; Lee, Jaeyoung ; Ju, Honglyoul ; Mun, Bongjin Simon. / Observation of in situ oxidation dynamics of vanadium thin film with ambient pressure X-ray photoemission spectroscopy. In: Journal of Applied Physics. 2016 ; Vol. 120, No. 20.
@article{eaeb75abc44946179fcd2bbb059fb925,
title = "Observation of in situ oxidation dynamics of vanadium thin film with ambient pressure X-ray photoemission spectroscopy",
abstract = "The evolution of oxidation/reduction states of vanadium oxide thin film was monitored in situ as a function of oxygen pressure and temperature via ambient pressure X-ray photoemission spectroscopy. Spectra analysis showed that VO2 can be grown at a relatively low temperature, T ∼ 523 K, and that V2O5 oxide develops rapidly at elevated oxygen pressure. Raman spectroscopy was applied to confirm the formation of VO2 oxide inside of the film. In addition, the temperature-dependent resistivity measurement on the grown thin film, e.g., 20 nm exhibited a desirable metal-insulator transition of VO2 with a resistivity change of ∼1.5 × 103 times at 349.3 K, displaying typical characteristics of thick VO2 film, e.g., 100 nm thick. Our results not only provide important spectroscopic information for the fabrication of vanadium oxides, but also show that high quality VO2 films can be formed at relatively low temperature, which is highly critical for engineering oxide film for heat-sensitive electronic devices.",
author = "Geonhwa Kim and Joonseok Yoon and Hyukjun Yang and Hojoon Lim and Hyungcheol Lee and Changkil Jeong and Hyungjoong Yun and Beomgyun Jeong and Ethan Crumlin and Jouhahn Lee and Jaeyoung Lee and Honglyoul Ju and Mun, {Bongjin Simon}",
year = "2016",
month = "11",
day = "28",
doi = "10.1063/1.4967994",
language = "English",
volume = "120",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

Kim, G, Yoon, J, Yang, H, Lim, H, Lee, H, Jeong, C, Yun, H, Jeong, B, Crumlin, E, Lee, J, Lee, J, Ju, H & Mun, BS 2016, 'Observation of in situ oxidation dynamics of vanadium thin film with ambient pressure X-ray photoemission spectroscopy', Journal of Applied Physics, vol. 120, no. 20, 205305. https://doi.org/10.1063/1.4967994

Observation of in situ oxidation dynamics of vanadium thin film with ambient pressure X-ray photoemission spectroscopy. / Kim, Geonhwa; Yoon, Joonseok; Yang, Hyukjun; Lim, Hojoon; Lee, Hyungcheol; Jeong, Changkil; Yun, Hyungjoong; Jeong, Beomgyun; Crumlin, Ethan; Lee, Jouhahn; Lee, Jaeyoung; Ju, Honglyoul; Mun, Bongjin Simon.

In: Journal of Applied Physics, Vol. 120, No. 20, 205305, 28.11.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Observation of in situ oxidation dynamics of vanadium thin film with ambient pressure X-ray photoemission spectroscopy

AU - Kim, Geonhwa

AU - Yoon, Joonseok

AU - Yang, Hyukjun

AU - Lim, Hojoon

AU - Lee, Hyungcheol

AU - Jeong, Changkil

AU - Yun, Hyungjoong

AU - Jeong, Beomgyun

AU - Crumlin, Ethan

AU - Lee, Jouhahn

AU - Lee, Jaeyoung

AU - Ju, Honglyoul

AU - Mun, Bongjin Simon

PY - 2016/11/28

Y1 - 2016/11/28

N2 - The evolution of oxidation/reduction states of vanadium oxide thin film was monitored in situ as a function of oxygen pressure and temperature via ambient pressure X-ray photoemission spectroscopy. Spectra analysis showed that VO2 can be grown at a relatively low temperature, T ∼ 523 K, and that V2O5 oxide develops rapidly at elevated oxygen pressure. Raman spectroscopy was applied to confirm the formation of VO2 oxide inside of the film. In addition, the temperature-dependent resistivity measurement on the grown thin film, e.g., 20 nm exhibited a desirable metal-insulator transition of VO2 with a resistivity change of ∼1.5 × 103 times at 349.3 K, displaying typical characteristics of thick VO2 film, e.g., 100 nm thick. Our results not only provide important spectroscopic information for the fabrication of vanadium oxides, but also show that high quality VO2 films can be formed at relatively low temperature, which is highly critical for engineering oxide film for heat-sensitive electronic devices.

AB - The evolution of oxidation/reduction states of vanadium oxide thin film was monitored in situ as a function of oxygen pressure and temperature via ambient pressure X-ray photoemission spectroscopy. Spectra analysis showed that VO2 can be grown at a relatively low temperature, T ∼ 523 K, and that V2O5 oxide develops rapidly at elevated oxygen pressure. Raman spectroscopy was applied to confirm the formation of VO2 oxide inside of the film. In addition, the temperature-dependent resistivity measurement on the grown thin film, e.g., 20 nm exhibited a desirable metal-insulator transition of VO2 with a resistivity change of ∼1.5 × 103 times at 349.3 K, displaying typical characteristics of thick VO2 film, e.g., 100 nm thick. Our results not only provide important spectroscopic information for the fabrication of vanadium oxides, but also show that high quality VO2 films can be formed at relatively low temperature, which is highly critical for engineering oxide film for heat-sensitive electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85000938331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85000938331&partnerID=8YFLogxK

U2 - 10.1063/1.4967994

DO - 10.1063/1.4967994

M3 - Article

AN - SCOPUS:85000938331

VL - 120

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 20

M1 - 205305

ER -