Observation of interfacial states by using photocurrent difference spectroscopy for ZnSe/GaAs heterostructures

Jung Hoon Song, E. D. Sim, K. S. Baek, Soo Kyung Chang, K. S. Lee

Research output: Contribution to journalArticle

Abstract

Photocurrent-difference spectroscopy (PDS), performed by measuring the difference between photocurrent spectra with and without additional laser illuminations, was demonstrated. The change in the photocurrent spectra, ΔPC, caused by the illuminations had a probe-energy dependency in the heterostructures. The ΔPC spectra varied with the energy of the additional illuminating lights. Compared to the conventional photocurrent spectra, the measured spectra were proven to be very sensitive to the interfacial electronic states in ZnSe/GaAs (001). Unusual features related to the interface states were observed and the possible origins of those peaks are discussed. The mechanism for the change in PC spectra is explained in terms of existence of trap states where the Fermi level is pinned at the interface. The influence of trap states on the photocurrent spectra was examined with above and below ZnSe-bandgap excitations.

Original languageEnglish
Pages (from-to)2006-2010
Number of pages5
JournalJournal of the Korean Physical Society
Volume53
Issue number4
DOIs
Publication statusPublished - 2008 Jan 1

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photocurrents
spectroscopy
illumination
traps
illuminating
luminaires
energy
probes
electronics
excitation
lasers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Observation of interfacial states by using photocurrent difference spectroscopy for ZnSe/GaAs heterostructures",
abstract = "Photocurrent-difference spectroscopy (PDS), performed by measuring the difference between photocurrent spectra with and without additional laser illuminations, was demonstrated. The change in the photocurrent spectra, ΔPC, caused by the illuminations had a probe-energy dependency in the heterostructures. The ΔPC spectra varied with the energy of the additional illuminating lights. Compared to the conventional photocurrent spectra, the measured spectra were proven to be very sensitive to the interfacial electronic states in ZnSe/GaAs (001). Unusual features related to the interface states were observed and the possible origins of those peaks are discussed. The mechanism for the change in PC spectra is explained in terms of existence of trap states where the Fermi level is pinned at the interface. The influence of trap states on the photocurrent spectra was examined with above and below ZnSe-bandgap excitations.",
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Observation of interfacial states by using photocurrent difference spectroscopy for ZnSe/GaAs heterostructures. / Song, Jung Hoon; Sim, E. D.; Baek, K. S.; Chang, Soo Kyung; Lee, K. S.

In: Journal of the Korean Physical Society, Vol. 53, No. 4, 01.01.2008, p. 2006-2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Observation of interfacial states by using photocurrent difference spectroscopy for ZnSe/GaAs heterostructures

AU - Song, Jung Hoon

AU - Sim, E. D.

AU - Baek, K. S.

AU - Chang, Soo Kyung

AU - Lee, K. S.

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AB - Photocurrent-difference spectroscopy (PDS), performed by measuring the difference between photocurrent spectra with and without additional laser illuminations, was demonstrated. The change in the photocurrent spectra, ΔPC, caused by the illuminations had a probe-energy dependency in the heterostructures. The ΔPC spectra varied with the energy of the additional illuminating lights. Compared to the conventional photocurrent spectra, the measured spectra were proven to be very sensitive to the interfacial electronic states in ZnSe/GaAs (001). Unusual features related to the interface states were observed and the possible origins of those peaks are discussed. The mechanism for the change in PC spectra is explained in terms of existence of trap states where the Fermi level is pinned at the interface. The influence of trap states on the photocurrent spectra was examined with above and below ZnSe-bandgap excitations.

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