Abstract
We present the structural, electrical and magnetic properties in the (Al,Mn)N thin films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The X-ray diffraction patterns reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. The (Al 1-xMnx)N films with x = 1.7% and 2.6% were obviously found to exhibit the ferromagnetic ordering with Curie temperature exceeding room temperature while the film with x = 3.0% was observed to show the ferromagnetic ordering at 5K, indicating that a critical Mn concentration exists. Since all the films exhibit insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples.
Original language | English |
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Pages (from-to) | 420-424 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 271 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - 2004 Nov 15 |
Bibliographical note
Funding Information:This work was supported by Samsung Advanced Institute of Technology (Grant No. 2003-2-0799). The authors thank S. J. Oh at Korea Basic Science Institute for his assistance with SQUID magnetometer.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry