Observation of room-temperature ferromagnetism in (Al,Mn)N thin films

Moon Ho Ham; Sukho Yoon; Yongjo Park; Jae Min Myoung

doi:10.1016/j.jcrysgro.2004.08.004

Observation of room-temperature ferromagnetism in (Al,Mn)N thin films

Moon Ho Ham, Sukho Yoon, Yongjo Park, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We present the structural, electrical and magnetic properties in the (Al,Mn)N thin films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The X-ray diffraction patterns reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. The (Al _1-xMn_x)N films with x = 1.7% and 2.6% were obviously found to exhibit the ferromagnetic ordering with Curie temperature exceeding room temperature while the film with x = 3.0% was observed to show the ferromagnetic ordering at 5K, indicating that a critical Mn concentration exists. Since all the films exhibit insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples.

Original language	English
Pages (from-to)	420-424
Number of pages	5
Journal	Journal of Crystal Growth
Volume	271
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.08.004
Publication status	Published - 2004 Nov 15

Bibliographical note

Funding Information:
This work was supported by Samsung Advanced Institute of Technology (Grant No. 2003-2-0799). The authors thank S. J. Oh at Korea Basic Science Institute for his assistance with SQUID magnetometer.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Observation of room-temperature ferromagnetism in (Al,Mn)N thin films",

abstract = "We present the structural, electrical and magnetic properties in the (Al,Mn)N thin films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The X-ray diffraction patterns reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. The (Al 1-xMnx)N films with x = 1.7% and 2.6% were obviously found to exhibit the ferromagnetic ordering with Curie temperature exceeding room temperature while the film with x = 3.0% was observed to show the ferromagnetic ordering at 5K, indicating that a critical Mn concentration exists. Since all the films exhibit insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples.",

author = "Ham, {Moon Ho} and Sukho Yoon and Yongjo Park and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by Samsung Advanced Institute of Technology (Grant No. 2003-2-0799). The authors thank S. J. Oh at Korea Basic Science Institute for his assistance with SQUID magnetometer. ",

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AU - Ham, Moon Ho

AU - Yoon, Sukho

AU - Park, Yongjo

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by Samsung Advanced Institute of Technology (Grant No. 2003-2-0799). The authors thank S. J. Oh at Korea Basic Science Institute for his assistance with SQUID magnetometer.

PY - 2004/11/15

Y1 - 2004/11/15

N2 - We present the structural, electrical and magnetic properties in the (Al,Mn)N thin films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The X-ray diffraction patterns reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. The (Al 1-xMnx)N films with x = 1.7% and 2.6% were obviously found to exhibit the ferromagnetic ordering with Curie temperature exceeding room temperature while the film with x = 3.0% was observed to show the ferromagnetic ordering at 5K, indicating that a critical Mn concentration exists. Since all the films exhibit insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples.

AB - We present the structural, electrical and magnetic properties in the (Al,Mn)N thin films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The X-ray diffraction patterns reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. The (Al 1-xMnx)N films with x = 1.7% and 2.6% were obviously found to exhibit the ferromagnetic ordering with Curie temperature exceeding room temperature while the film with x = 3.0% was observed to show the ferromagnetic ordering at 5K, indicating that a critical Mn concentration exists. Since all the films exhibit insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples.

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