Observation of room-temperature ferromagnetism in (Al,Mn)N thin films

Moon Ho Ham, Sukho Yoon, Yongjo Park, Jae Min Myoung

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We present the structural, electrical and magnetic properties in the (Al,Mn)N thin films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The X-ray diffraction patterns reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. The (Al 1-xMnx)N films with x = 1.7% and 2.6% were obviously found to exhibit the ferromagnetic ordering with Curie temperature exceeding room temperature while the film with x = 3.0% was observed to show the ferromagnetic ordering at 5K, indicating that a critical Mn concentration exists. Since all the films exhibit insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples.

Original languageEnglish
Pages (from-to)420-424
Number of pages5
JournalJournal of Crystal Growth
Volume271
Issue number3-4
DOIs
Publication statusPublished - 2004 Nov 15

Fingerprint

Ferromagnetism
ferromagnetism
Thin films
room temperature
thin films
Temperature
Exchange interactions
Curie temperature
Valence bands
Molecular beam epitaxy
wurtzite
Diffraction patterns
Structural properties
Magnetic properties
Electric properties
molecular beam epitaxy
diffraction patterns
electrical properties
magnetic properties
valence

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Ham, Moon Ho ; Yoon, Sukho ; Park, Yongjo ; Myoung, Jae Min. / Observation of room-temperature ferromagnetism in (Al,Mn)N thin films. In: Journal of Crystal Growth. 2004 ; Vol. 271, No. 3-4. pp. 420-424.
@article{112c569b5e5146d3b71f1c14cd8551b1,
title = "Observation of room-temperature ferromagnetism in (Al,Mn)N thin films",
abstract = "We present the structural, electrical and magnetic properties in the (Al,Mn)N thin films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The X-ray diffraction patterns reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. The (Al 1-xMnx)N films with x = 1.7{\%} and 2.6{\%} were obviously found to exhibit the ferromagnetic ordering with Curie temperature exceeding room temperature while the film with x = 3.0{\%} was observed to show the ferromagnetic ordering at 5K, indicating that a critical Mn concentration exists. Since all the films exhibit insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples.",
author = "Ham, {Moon Ho} and Sukho Yoon and Yongjo Park and Myoung, {Jae Min}",
year = "2004",
month = "11",
day = "15",
doi = "10.1016/j.jcrysgro.2004.08.004",
language = "English",
volume = "271",
pages = "420--424",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "3-4",

}

Observation of room-temperature ferromagnetism in (Al,Mn)N thin films. / Ham, Moon Ho; Yoon, Sukho; Park, Yongjo; Myoung, Jae Min.

In: Journal of Crystal Growth, Vol. 271, No. 3-4, 15.11.2004, p. 420-424.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Observation of room-temperature ferromagnetism in (Al,Mn)N thin films

AU - Ham, Moon Ho

AU - Yoon, Sukho

AU - Park, Yongjo

AU - Myoung, Jae Min

PY - 2004/11/15

Y1 - 2004/11/15

N2 - We present the structural, electrical and magnetic properties in the (Al,Mn)N thin films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The X-ray diffraction patterns reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. The (Al 1-xMnx)N films with x = 1.7% and 2.6% were obviously found to exhibit the ferromagnetic ordering with Curie temperature exceeding room temperature while the film with x = 3.0% was observed to show the ferromagnetic ordering at 5K, indicating that a critical Mn concentration exists. Since all the films exhibit insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples.

AB - We present the structural, electrical and magnetic properties in the (Al,Mn)N thin films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The X-ray diffraction patterns reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. The (Al 1-xMnx)N films with x = 1.7% and 2.6% were obviously found to exhibit the ferromagnetic ordering with Curie temperature exceeding room temperature while the film with x = 3.0% was observed to show the ferromagnetic ordering at 5K, indicating that a critical Mn concentration exists. Since all the films exhibit insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples.

UR - http://www.scopus.com/inward/record.url?scp=7544243901&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=7544243901&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.08.004

DO - 10.1016/j.jcrysgro.2004.08.004

M3 - Article

AN - SCOPUS:7544243901

VL - 271

SP - 420

EP - 424

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -