Excellent high frequency and optoelectronic material properties of graphene oxide have been highlighted recently. Our study reveals interactions between high frequency up to 4 GHz and 488 nm light wave in the thermally tunable band-gap of annealed graphene oxide to investigate the effect of 488 nm wave induces additional carriers. Graphene oxide is a strong candidate for studying high frequency and optical interactions due to excellent scattering parametric characteristics being a few nano-meters thick and having outstanding optical characteristics with a variable band-gap. Measurement results of the high frequency device composed of annealed graphene oxide with optical illumination demonstrate that the photon-assisted carriers affect variation of scattering parameters. The signals were changed due to π–π* interaction and excitons affected by varied band gap of graphene oxide and illumination intensity, respectively. The graphene oxide interconnector is a promising candidate for a controllable high frequency device. This initial study not only gives further insight into the interaction of high frequency and 488 nm wave with graphene oxide reduced to different levels, but also reveals a way to control the scattering by optic power.
Bibliographical noteFunding Information:
This work was partially supported by the Priority Research Centers Program ( 2009-0093823 ), the Korean Government (MSIP) (No. 2015R1A5A1037668 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST), the ICT R&D program of MSIP/IITP ( R0101-15-0034 ), and Industrial Strategic Technology Development Program through the Ministry of Trade, Industry and Energy (MOTIE, Korea) ( 2MR4090 ).
© 2016 Elsevier Ltd
All Science Journal Classification (ASJC) codes
- Materials Science(all)