Observation of the hysteresis behavior of pentacene thin-film transistors in I-V and C-V measurements

Woo Jin Kim, Chang Su Kim, Sung Jin Jo, Sung Won Lee, Se Jong Lee, Hong Koo Baik

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Current-voltage and capacitance-voltage measurements of the organic thin-film transistors (OTFTs) were performed to observe the change of the surface state of gate dielectrics using various surface treatments. The hexamethyldisilazane (HMDS)-treated OTFTs, which has few OH groups on the dielectric surface, showed little hysteresis behavior than that of other surface-treated OTFTs. In particular, when the positive gate bias (for a depletion state) was applied, more hysteresis was observed, indicating that OH groups on a gate dielectric are responsible for the electron trapping in the channel. However, when the surface is terminated with (CH3) 3 -Si, eliminating OH groups by HMDS treatment, much less hysteresis was observed in the positive direction. Therefore, it seems apparent that an OH -free surface is desirable for a more stable operation of OTFTs.

Original languageEnglish
Article number007701ESL
Pages (from-to)H1-H4
JournalElectrochemical and Solid-State Letters
Volume10
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

Fingerprint

Thin film transistors
Hysteresis
transistors
hysteresis
Gate dielectrics
thin films
Capacitance measurement
Voltage measurement
Surface states
Surface treatment
surface treatment
electrical measurement
depletion
capacitance
trapping
pentacene
Electrons
Electric potential
electric potential
electrons

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kim, Woo Jin ; Kim, Chang Su ; Jo, Sung Jin ; Lee, Sung Won ; Lee, Se Jong ; Baik, Hong Koo. / Observation of the hysteresis behavior of pentacene thin-film transistors in I-V and C-V measurements. In: Electrochemical and Solid-State Letters. 2007 ; Vol. 10, No. 1. pp. H1-H4.
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Observation of the hysteresis behavior of pentacene thin-film transistors in I-V and C-V measurements. / Kim, Woo Jin; Kim, Chang Su; Jo, Sung Jin; Lee, Sung Won; Lee, Se Jong; Baik, Hong Koo.

In: Electrochemical and Solid-State Letters, Vol. 10, No. 1, 007701ESL, 01.01.2007, p. H1-H4.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Observation of the hysteresis behavior of pentacene thin-film transistors in I-V and C-V measurements

AU - Kim, Woo Jin

AU - Kim, Chang Su

AU - Jo, Sung Jin

AU - Lee, Sung Won

AU - Lee, Se Jong

AU - Baik, Hong Koo

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AB - Current-voltage and capacitance-voltage measurements of the organic thin-film transistors (OTFTs) were performed to observe the change of the surface state of gate dielectrics using various surface treatments. The hexamethyldisilazane (HMDS)-treated OTFTs, which has few OH groups on the dielectric surface, showed little hysteresis behavior than that of other surface-treated OTFTs. In particular, when the positive gate bias (for a depletion state) was applied, more hysteresis was observed, indicating that OH groups on a gate dielectric are responsible for the electron trapping in the channel. However, when the surface is terminated with (CH3) 3 -Si, eliminating OH groups by HMDS treatment, much less hysteresis was observed in the positive direction. Therefore, it seems apparent that an OH -free surface is desirable for a more stable operation of OTFTs.

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