Observation of the phase inversion in photoreflectance spectra from ZnSe/GaAs(001) heterostructures

J. H. Song, E. D. Sim, S. H. Lee, S. K. Chang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The pump photon energy dependence of photoreflectance (PR) of a ZnSe/GaAs heterostructure has been measured at 77 K. The phase inversion in the PR signal is observed for the pump photon energy when it decreases from above to below the excitonic absorption edge of ZnSe. The observation of the phase inversion in PR is explained in terms of the modulation of the built-in electric field at the interface of the ZnSe/GaAs heterojunction, not at the ZnSe surface. It provides evidence of a built-in triangular-well potential and of hole traps at the ZnSe/GaAs interface. This argument is confirmed by photoreflectance excitation spectroscopy.

Original languageEnglish
Pages (from-to)1382-1384
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number10
DOIs
Publication statusPublished - 1998 Dec 1

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inversions
pumps
photons
heterojunctions
traps
modulation
electric fields
energy
spectroscopy
excitation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{132117e408e9416c9c67ac0188933f70,
title = "Observation of the phase inversion in photoreflectance spectra from ZnSe/GaAs(001) heterostructures",
abstract = "The pump photon energy dependence of photoreflectance (PR) of a ZnSe/GaAs heterostructure has been measured at 77 K. The phase inversion in the PR signal is observed for the pump photon energy when it decreases from above to below the excitonic absorption edge of ZnSe. The observation of the phase inversion in PR is explained in terms of the modulation of the built-in electric field at the interface of the ZnSe/GaAs heterojunction, not at the ZnSe surface. It provides evidence of a built-in triangular-well potential and of hole traps at the ZnSe/GaAs interface. This argument is confirmed by photoreflectance excitation spectroscopy.",
author = "Song, {J. H.} and Sim, {E. D.} and Lee, {S. H.} and Chang, {S. K.}",
year = "1998",
month = "12",
day = "1",
doi = "10.1063/1.122167",
language = "English",
volume = "73",
pages = "1382--1384",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

Observation of the phase inversion in photoreflectance spectra from ZnSe/GaAs(001) heterostructures. / Song, J. H.; Sim, E. D.; Lee, S. H.; Chang, S. K.

In: Applied Physics Letters, Vol. 73, No. 10, 01.12.1998, p. 1382-1384.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Observation of the phase inversion in photoreflectance spectra from ZnSe/GaAs(001) heterostructures

AU - Song, J. H.

AU - Sim, E. D.

AU - Lee, S. H.

AU - Chang, S. K.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The pump photon energy dependence of photoreflectance (PR) of a ZnSe/GaAs heterostructure has been measured at 77 K. The phase inversion in the PR signal is observed for the pump photon energy when it decreases from above to below the excitonic absorption edge of ZnSe. The observation of the phase inversion in PR is explained in terms of the modulation of the built-in electric field at the interface of the ZnSe/GaAs heterojunction, not at the ZnSe surface. It provides evidence of a built-in triangular-well potential and of hole traps at the ZnSe/GaAs interface. This argument is confirmed by photoreflectance excitation spectroscopy.

AB - The pump photon energy dependence of photoreflectance (PR) of a ZnSe/GaAs heterostructure has been measured at 77 K. The phase inversion in the PR signal is observed for the pump photon energy when it decreases from above to below the excitonic absorption edge of ZnSe. The observation of the phase inversion in PR is explained in terms of the modulation of the built-in electric field at the interface of the ZnSe/GaAs heterojunction, not at the ZnSe surface. It provides evidence of a built-in triangular-well potential and of hole traps at the ZnSe/GaAs interface. This argument is confirmed by photoreflectance excitation spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=0000216777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000216777&partnerID=8YFLogxK

U2 - 10.1063/1.122167

DO - 10.1063/1.122167

M3 - Article

VL - 73

SP - 1382

EP - 1384

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -