Offset-Compensated Cross-Coupled PFET Bit-Line Conditioning and Selective Negative Bit-Line Write Assist for High-Density Low-Power SRAM

Hanwool Jeong, Taewon Kim, Younghwi Yang, Taejoong Song, Gyuhong Kim, Hyo Sig Won, Seong Ook Jung

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

An offset-compensated cross-coupled PFET bit-line (BL) conditioning circuit (OC-CPBC) and a selective negative BL write-assist circuit (SNBL-WA) are proposed for high-density FinFET static RAM (SRAM). The word-line (WL) underdrive read-assist and the negative BL write-assist circuits should be used for the stable operation of high-density FinFET SRAM. However, the WL underdrive read-assist circuit degrades the performance, and the negative BL write-assist circuit consumes a large amount of energy. The OC-CPBC enhances BL development during the evaluation phase by applying cross-coupled PFETs whose offset is compensated by precharging each of the two BLs separately through diode-connected cross-coupled PFETs. The SNBL-WA performs a write assist only when a write failure is detected, and this selective write assist reduces the write energy consumption. The simulation results show that the performance and energy consumption are improved by 41% and 48%, respectively, by applying the OC-CPBC and SNBL-WA to SRAM, even with a decrease in area.

Original languageEnglish
Article number7024942
Pages (from-to)1062-1070
Number of pages9
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume62
Issue number4
DOIs
Publication statusPublished - 2015 Apr 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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