Ohmic contact formation mechanism of Au/Pt/Pd ohmic contact to p-ZnTe

Dae Woo Kim; Hee Soo Park; Joon Seop Kwak; Hong Koo Baik; Sung Man Lee

doi:10.1007/s11664-999-0200-1

Ohmic contact formation mechanism of Au/Pt/Pd ohmic contact to p-ZnTe

Dae Woo Kim, Hee Soo Park, Joon Seop Kwak, Hong Koo Baik, Sung Man Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

The ohmic contact formation mechanism and the role of Pt layer of Au(500 angstrom) Pt(500 angstrom)/Pd(100 angstrom) ohmic contact to p-ZnTe were investigated. The specific contact resistance of Au/Pt/Pd contact depended strongly on the annealing temperature. As the annealing temperature increased, the specific contact resistance decreased and reached a minimum value of 6 × 10^-6 Ωcm² at 200°C. From the Hall measurement, the hole concentration increased with the annealing temperature and reached a maximum value of 2.3 × 10¹⁹ cm^-3 at 300°C. The Schottky barrier height decreased with the increase of annealing temperature and reached a minimum value of 0.34 eV at 200°C and it was due to the interfacial reaction of Pd and ZnTe. Therefore, the decrease of contact resistance was due to the increase of doping concentration as well as the decrease of Schottky barrier height by the interfacial reaction of Pd ZnTe. The specific contact resistances of Au Pd, Au/Pt/Pd and Au/Mo/Pd as a function of annealing time was investigated to clarify the role of Pt layer.

Original language	English
Pages (from-to)	939-943
Number of pages	5
Journal	Journal of Electronic Materials
Volume	28
Issue number	8
DOIs	https://doi.org/10.1007/s11664-999-0200-1
Publication status	Published - 1999 Jan 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Kim, D. W., Park, H. S., Kwak, J. S., Baik, H. K., & Lee, S. M. (1999). Ohmic contact formation mechanism of Au/Pt/Pd ohmic contact to p-ZnTe. Journal of Electronic Materials, 28(8), 939-943. https://doi.org/10.1007/s11664-999-0200-1

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abstract = "The ohmic contact formation mechanism and the role of Pt layer of Au(500 angstrom) Pt(500 angstrom)/Pd(100 angstrom) ohmic contact to p-ZnTe were investigated. The specific contact resistance of Au/Pt/Pd contact depended strongly on the annealing temperature. As the annealing temperature increased, the specific contact resistance decreased and reached a minimum value of 6 × 10-6 Ωcm2 at 200°C. From the Hall measurement, the hole concentration increased with the annealing temperature and reached a maximum value of 2.3 × 1019 cm-3 at 300°C. The Schottky barrier height decreased with the increase of annealing temperature and reached a minimum value of 0.34 eV at 200°C and it was due to the interfacial reaction of Pd and ZnTe. Therefore, the decrease of contact resistance was due to the increase of doping concentration as well as the decrease of Schottky barrier height by the interfacial reaction of Pd ZnTe. The specific contact resistances of Au Pd, Au/Pt/Pd and Au/Mo/Pd as a function of annealing time was investigated to clarify the role of Pt layer.",

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AU - Lee, Sung Man

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N2 - The ohmic contact formation mechanism and the role of Pt layer of Au(500 angstrom) Pt(500 angstrom)/Pd(100 angstrom) ohmic contact to p-ZnTe were investigated. The specific contact resistance of Au/Pt/Pd contact depended strongly on the annealing temperature. As the annealing temperature increased, the specific contact resistance decreased and reached a minimum value of 6 × 10-6 Ωcm2 at 200°C. From the Hall measurement, the hole concentration increased with the annealing temperature and reached a maximum value of 2.3 × 1019 cm-3 at 300°C. The Schottky barrier height decreased with the increase of annealing temperature and reached a minimum value of 0.34 eV at 200°C and it was due to the interfacial reaction of Pd and ZnTe. Therefore, the decrease of contact resistance was due to the increase of doping concentration as well as the decrease of Schottky barrier height by the interfacial reaction of Pd ZnTe. The specific contact resistances of Au Pd, Au/Pt/Pd and Au/Mo/Pd as a function of annealing time was investigated to clarify the role of Pt layer.

AB - The ohmic contact formation mechanism and the role of Pt layer of Au(500 angstrom) Pt(500 angstrom)/Pd(100 angstrom) ohmic contact to p-ZnTe were investigated. The specific contact resistance of Au/Pt/Pd contact depended strongly on the annealing temperature. As the annealing temperature increased, the specific contact resistance decreased and reached a minimum value of 6 × 10-6 Ωcm2 at 200°C. From the Hall measurement, the hole concentration increased with the annealing temperature and reached a maximum value of 2.3 × 1019 cm-3 at 300°C. The Schottky barrier height decreased with the increase of annealing temperature and reached a minimum value of 0.34 eV at 200°C and it was due to the interfacial reaction of Pd and ZnTe. Therefore, the decrease of contact resistance was due to the increase of doping concentration as well as the decrease of Schottky barrier height by the interfacial reaction of Pd ZnTe. The specific contact resistances of Au Pd, Au/Pt/Pd and Au/Mo/Pd as a function of annealing time was investigated to clarify the role of Pt layer.

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