Abstract
The ohmic contact formation mechanism and the role of Pt layer of Au(500 angstrom) Pt(500 angstrom)/Pd(100 angstrom) ohmic contact to p-ZnTe were investigated. The specific contact resistance of Au/Pt/Pd contact depended strongly on the annealing temperature. As the annealing temperature increased, the specific contact resistance decreased and reached a minimum value of 6 × 10-6 Ωcm2 at 200°C. From the Hall measurement, the hole concentration increased with the annealing temperature and reached a maximum value of 2.3 × 1019 cm-3 at 300°C. The Schottky barrier height decreased with the increase of annealing temperature and reached a minimum value of 0.34 eV at 200°C and it was due to the interfacial reaction of Pd and ZnTe. Therefore, the decrease of contact resistance was due to the increase of doping concentration as well as the decrease of Schottky barrier height by the interfacial reaction of Pd ZnTe. The specific contact resistances of Au Pd, Au/Pt/Pd and Au/Mo/Pd as a function of annealing time was investigated to clarify the role of Pt layer.
| Original language | English |
|---|---|
| Pages (from-to) | 939-943 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 28 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1999 Jan 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
}
Ohmic contact formation mechanism of Au/Pt/Pd ohmic contact to p-ZnTe. / Kim, Dae Woo; Park, Hee Soo; Kwak, Joon Seop; Baik, Hong Koo; Lee, Sung Man.
In: Journal of Electronic Materials, Vol. 28, No. 8, 01.01.1999, p. 939-943.Research output: Contribution to journal › Article
TY - JOUR
T1 - Ohmic contact formation mechanism of Au/Pt/Pd ohmic contact to p-ZnTe
AU - Kim, Dae Woo
AU - Park, Hee Soo
AU - Kwak, Joon Seop
AU - Baik, Hong Koo
AU - Lee, Sung Man
PY - 1999/1/1
Y1 - 1999/1/1
N2 - The ohmic contact formation mechanism and the role of Pt layer of Au(500 angstrom) Pt(500 angstrom)/Pd(100 angstrom) ohmic contact to p-ZnTe were investigated. The specific contact resistance of Au/Pt/Pd contact depended strongly on the annealing temperature. As the annealing temperature increased, the specific contact resistance decreased and reached a minimum value of 6 × 10-6 Ωcm2 at 200°C. From the Hall measurement, the hole concentration increased with the annealing temperature and reached a maximum value of 2.3 × 1019 cm-3 at 300°C. The Schottky barrier height decreased with the increase of annealing temperature and reached a minimum value of 0.34 eV at 200°C and it was due to the interfacial reaction of Pd and ZnTe. Therefore, the decrease of contact resistance was due to the increase of doping concentration as well as the decrease of Schottky barrier height by the interfacial reaction of Pd ZnTe. The specific contact resistances of Au Pd, Au/Pt/Pd and Au/Mo/Pd as a function of annealing time was investigated to clarify the role of Pt layer.
AB - The ohmic contact formation mechanism and the role of Pt layer of Au(500 angstrom) Pt(500 angstrom)/Pd(100 angstrom) ohmic contact to p-ZnTe were investigated. The specific contact resistance of Au/Pt/Pd contact depended strongly on the annealing temperature. As the annealing temperature increased, the specific contact resistance decreased and reached a minimum value of 6 × 10-6 Ωcm2 at 200°C. From the Hall measurement, the hole concentration increased with the annealing temperature and reached a maximum value of 2.3 × 1019 cm-3 at 300°C. The Schottky barrier height decreased with the increase of annealing temperature and reached a minimum value of 0.34 eV at 200°C and it was due to the interfacial reaction of Pd and ZnTe. Therefore, the decrease of contact resistance was due to the increase of doping concentration as well as the decrease of Schottky barrier height by the interfacial reaction of Pd ZnTe. The specific contact resistances of Au Pd, Au/Pt/Pd and Au/Mo/Pd as a function of annealing time was investigated to clarify the role of Pt layer.
UR - http://www.scopus.com/inward/record.url?scp=0033350801&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033350801&partnerID=8YFLogxK
U2 - 10.1007/s11664-999-0200-1
DO - 10.1007/s11664-999-0200-1
M3 - Article
VL - 28
SP - 939
EP - 943
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 8
ER -