Ohmic contact to GaN grown by MOCVD

Dae Woo Kim, Hong Koo Baik, Cha Yeon Kim, Sung Woo Kim, Chang Hee Hong

Research output: Contribution to journalConference article

3 Citations (Scopus)


We investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6Ωcm2 was obtained for Au(1000 angstroms)/Ni(400 angstroms)/Ti(400 angstroms)/Si(1460 angstroms)/Ti(150 angstroms) after annealing at 900 °C for 3 min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function.

Original languageEnglish
Pages (from-to)1083-1088
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997 Dec 1
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: 1997 Nov 301997 Dec 4

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Ohmic contact to GaN grown by MOCVD'. Together they form a unique fingerprint.

  • Cite this

    Kim, D. W., Baik, H. K., Kim, C. Y., Kim, S. W., & Hong, C. H. (1997). Ohmic contact to GaN grown by MOCVD. Materials Research Society Symposium - Proceedings, 482, 1083-1088.