Ohmic contact to GaN grown by MOCVD

Dae Woo Kim; Hong Koo Baik; Cha Yeon Kim; Sung Woo Kim; Chang Hee Hong

doi:10.1557/proc-482-1083

Ohmic contact to GaN grown by MOCVD

Dae Woo Kim, Hong Koo Baik, Cha Yeon Kim, Sung Woo Kim, Chang Hee Hong

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N₂ ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10^-6Ωcm² was obtained for Au(1000 angstroms)/Ni(400 angstroms)/Ti(400 angstroms)/Si(1460 angstroms)/Ti(150 angstroms) after annealing at 900 °C for 3 min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function.

Original language	English
Pages (from-to)	1083-1088
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	482
DOIs	https://doi.org/10.1557/proc-482-1083
Publication status	Published - 1997
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1997 Nov 30 → 1997 Dec 4

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Ohmic contact to GaN grown by MOCVD",

abstract = "We investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6Ωcm2 was obtained for Au(1000 angstroms)/Ni(400 angstroms)/Ti(400 angstroms)/Si(1460 angstroms)/Ti(150 angstroms) after annealing at 900 °C for 3 min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function.",

author = "Kim, {Dae Woo} and Baik, {Hong Koo} and Kim, {Cha Yeon} and Kim, {Sung Woo} and Hong, {Chang Hee}",

year = "1997",

doi = "10.1557/proc-482-1083",

language = "English",

volume = "482",

pages = "1083--1088",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 30-11-1997 Through 04-12-1997",

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TY - JOUR

T1 - Ohmic contact to GaN grown by MOCVD

AU - Kim, Dae Woo

AU - Baik, Hong Koo

AU - Kim, Cha Yeon

AU - Kim, Sung Woo

AU - Hong, Chang Hee

PY - 1997

Y1 - 1997

N2 - We investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6Ωcm2 was obtained for Au(1000 angstroms)/Ni(400 angstroms)/Ti(400 angstroms)/Si(1460 angstroms)/Ti(150 angstroms) after annealing at 900 °C for 3 min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function.

AB - We investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6Ωcm2 was obtained for Au(1000 angstroms)/Ni(400 angstroms)/Ti(400 angstroms)/Si(1460 angstroms)/Ti(150 angstroms) after annealing at 900 °C for 3 min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function.

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AN - SCOPUS:0031363675

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VL - 482

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EP - 1088

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 30 November 1997 through 4 December 1997

ER -

Ohmic contact to GaN grown by MOCVD

Abstract

All Science Journal Classification (ASJC) codes

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