Ohmic contact to GaN grown by MOCVD

Dae Woo Kim, Hong Koo Baik, Cha Yeon Kim, Sung Woo Kim, Chang Hee Hong

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6Ωcm2 was obtained for Au(1000 angstroms)/Ni(400 angstroms)/Ti(400 angstroms)/Si(1460 angstroms)/Ti(150 angstroms) after annealing at 900 °C for 3 min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function.

Original languageEnglish
Pages (from-to)1083-1088
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
Publication statusPublished - 1997 Dec 1
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: 1997 Nov 301997 Dec 4

Fingerprint

Ohmic contacts
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
electric contacts
Electric properties
Annealing
Organic Chemicals
Silicides
Organic chemicals
Contact resistance
Surface chemistry
electrical properties
Chemical vapor deposition
annealing
silicides
Metals
contact resistance

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, D. W., Baik, H. K., Kim, C. Y., Kim, S. W., & Hong, C. H. (1997). Ohmic contact to GaN grown by MOCVD. Materials Research Society Symposium - Proceedings, 482, 1083-1088.
Kim, Dae Woo ; Baik, Hong Koo ; Kim, Cha Yeon ; Kim, Sung Woo ; Hong, Chang Hee. / Ohmic contact to GaN grown by MOCVD. In: Materials Research Society Symposium - Proceedings. 1997 ; Vol. 482. pp. 1083-1088.
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abstract = "We investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6Ωcm2 was obtained for Au(1000 angstroms)/Ni(400 angstroms)/Ti(400 angstroms)/Si(1460 angstroms)/Ti(150 angstroms) after annealing at 900 °C for 3 min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function.",
author = "Kim, {Dae Woo} and Baik, {Hong Koo} and Kim, {Cha Yeon} and Kim, {Sung Woo} and Hong, {Chang Hee}",
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Kim, DW, Baik, HK, Kim, CY, Kim, SW & Hong, CH 1997, 'Ohmic contact to GaN grown by MOCVD', Materials Research Society Symposium - Proceedings, vol. 482, pp. 1083-1088.

Ohmic contact to GaN grown by MOCVD. / Kim, Dae Woo; Baik, Hong Koo; Kim, Cha Yeon; Kim, Sung Woo; Hong, Chang Hee.

In: Materials Research Society Symposium - Proceedings, Vol. 482, 01.12.1997, p. 1083-1088.

Research output: Contribution to journalConference article

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T1 - Ohmic contact to GaN grown by MOCVD

AU - Kim, Dae Woo

AU - Baik, Hong Koo

AU - Kim, Cha Yeon

AU - Kim, Sung Woo

AU - Hong, Chang Hee

PY - 1997/12/1

Y1 - 1997/12/1

N2 - We investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6Ωcm2 was obtained for Au(1000 angstroms)/Ni(400 angstroms)/Ti(400 angstroms)/Si(1460 angstroms)/Ti(150 angstroms) after annealing at 900 °C for 3 min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function.

AB - We investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6Ωcm2 was obtained for Au(1000 angstroms)/Ni(400 angstroms)/Ti(400 angstroms)/Si(1460 angstroms)/Ti(150 angstroms) after annealing at 900 °C for 3 min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function.

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