On-film formation of Bi nanowires with extraordinary electron mobility

Wooyoung Shim, Jinhee Ham, Kyoung Il Lee, Won Young Jeung, Mark Johnson, Wooyoung Lee

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112 Citations (Scopus)

Abstract

A novel stress-induced method to grow Semimetallic Bi nanowires along with an analysis of their transport properties is presented. Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at 260-270 °C. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. The diameter- tunable Bi nanowires can be produced by controlling the mean grain size of the film, which is dependent upon the thickness of the film. Four-terminal devices based on individual Bi nanowires were found to exhibit very large transverse and longitudinal ordinary magnetoresistance, indicating high-quality, single crystalline Bi nanowires. Unusual transport properties, including a mobility value of 76900 cm 2/(V s) and a mean free path of 1.35 μm in a 120 nm Bi nanowire, were observed at room temperature.

Original languageEnglish
Pages (from-to)18-22
Number of pages5
JournalNano letters
Volume9
Issue number1
DOIs
Publication statusPublished - 2009 Jan 1

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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