Layered transition-metal dichalcogenides have extraordinary electronic properties, which can be easily modified by various means. Here, we have investigated how the stability and electronic structure of MoS2 monolayers is influenced by alloying, i.e., by substitution of the transition metal Mo by W and Nb and of the chalcogen S by Se. While W and Se incorporate into the MoS2 matrix homogeneously, forming solid solutions, the incorporation of Nb is energetically unstable and results in phase separation. However, all three alloying atoms change the electronic band structure significantly. For example, a very small concentration of Nb atoms introduces localized metallic states, while Mo1-xWxS2 and MoS2-ySey alloys exhibit spin-splitting of the valence band of strength that is in between that of the pure materials. Moreover, small, but evident spin-splitting is introduced in the conduction band due to the symmetry breaking. Therefore, transition-metal dichalcogenide alloys are interesting candidates for optoelectronic and spintronic applications.
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© 2015 by the authors; licensee MDPI, Basel, Switzerland.
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Signal Processing
- Hardware and Architecture
- Computer Networks and Communications
- Electrical and Electronic Engineering