One-Sided Schmitt-Trigger-Based 9T SRAM Cell for Near-Threshold Operation

Keonhee Cho, Juhyun Park, Tae Woo Oh, Seong Ook Jung

Research output: Contribution to journalArticle

Abstract

This paper presents a one-sided Schmitt-Trigger-based 9T static random access memory cell with low energy consumption and high read stability, write ability, and hold stability yields in a bit-interleaving structure without write-back scheme. The proposed Schmitt-Trigger-based 9T static random access memory cell obtains a high read stability yield by using a one-sided Schmitt-Trigger inverter with a single bit-line structure. In addition, the write ability yield is improved by applying selective power gating and a Schmitt-Trigger inverter write assist technique that controls the trip voltage of the Schmitt-Trigger inverter. The proposed Schmitt-Trigger-based 9T static random access memory cell has 0.79, 0.77, and 0.79 times the area, and consumes 0.31, 0.68, and 0.90 times the energy of Chang's 10T, the Schmitt-Trigger-based 10T, and MH's 9T static random access memory cells, respectively, based on 22-nm FinFET technology.

Original languageEnglish
Article number9014534
Pages (from-to)1551-1561
Number of pages11
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume67
Issue number5
DOIs
Publication statusPublished - 2020 May

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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