This paper presents a one-sided Schmitt-Trigger-based 9T static random access memory cell with low energy consumption and high read stability, write ability, and hold stability yields in a bit-interleaving structure without write-back scheme. The proposed Schmitt-Trigger-based 9T static random access memory cell obtains a high read stability yield by using a one-sided Schmitt-Trigger inverter with a single bit-line structure. In addition, the write ability yield is improved by applying selective power gating and a Schmitt-Trigger inverter write assist technique that controls the trip voltage of the Schmitt-Trigger inverter. The proposed Schmitt-Trigger-based 9T static random access memory cell has 0.79, 0.77, and 0.79 times the area, and consumes 0.31, 0.68, and 0.90 times the energy of Chang's 10T, the Schmitt-Trigger-based 10T, and MH's 9T static random access memory cells, respectively, based on 22-nm FinFET technology.
|Number of pages||11|
|Journal||IEEE Transactions on Circuits and Systems I: Regular Papers|
|Publication status||Published - 2020 May|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering