One-sided static noise margin and gaussian-tail-fitting method for SRAM

Hanwool Jeong, Younghwi Yang, Junha Lee, Jisu Kim, Seong Ook Jung

Research output: Contribution to journalArticle

Abstract

In this paper, we propose a method to estimate the read failure rate of a static random access memory (SRAM) cell. Conventional read stability metrics cannot accurately estimate the read failure probability as technology scales down, because some metrics cannot characterize read stability and others can no longer be approximated to a known distribution. We first introduce a one-sided static noise margin (OSNM), whose lower tail region follows a Gaussian distribution, and also propose a Gaussian-tail-fitting method that properly models the distribution of the OSNM at the tail region. It is demonstrated that the OSNM can accurately estimate the SRAM cell yield using the proposed Gaussian-tail-fitting method.

Original languageEnglish
Article number6549169
Pages (from-to)1262-1269
Number of pages8
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume22
Issue number6
DOIs
Publication statusPublished - 2014 Jun

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Data storage equipment
Gaussian distribution

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Jeong, Hanwool ; Yang, Younghwi ; Lee, Junha ; Kim, Jisu ; Jung, Seong Ook. / One-sided static noise margin and gaussian-tail-fitting method for SRAM. In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 2014 ; Vol. 22, No. 6. pp. 1262-1269.
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One-sided static noise margin and gaussian-tail-fitting method for SRAM. / Jeong, Hanwool; Yang, Younghwi; Lee, Junha; Kim, Jisu; Jung, Seong Ook.

In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 22, No. 6, 6549169, 06.2014, p. 1262-1269.

Research output: Contribution to journalArticle

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