One-Step All-Solution-Based Au–GO Core–Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices

Adila Rani, Dhinesh Babu Velusamy, Filipe Marques Mota, Yoon Hee Jang, Richard Hahnkee Kim, Cheolmin Park, Dong Ha Kim

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Nonvolatile resistive random-access memory devices based on graphene-oxide-wrapped gold nanospheres (AuNS@GO) are fabricated following a one-step room-temperature solution-process approach reported herein for the first time. The effect of the thickness of the GO layer (2, 5, and 7 nm) and the size of the synthesized AuNS (15 and 55 nm) are inspected. Reliable bistable switching is observed in the devices made from a flexible substrate and incorporating 5 and 7 nm thick GO-wrapped AuNS, sandwiched between two metal electrodes. Current–voltage measurements show bipolar switching behavior with an ON/OFF ratio of 103 and relatively low operating voltage (−2.5 V). The aforementioned devices unveil remarkable robustness over 100 endurance cycles and a retention of 103 s. Conversely, a 2 nm thick GO layer is shown to be insufficient to allow current passage from the bottom to the top electrodes. The resistive switching mechanism is demonstrated by space charge trapped limited current due to the AuNS in AuNS@GO matrix. The proposed device and methodology herein applied are expected to be attractive candidates for future generation flexible memory devices.

Original languageEnglish
Article number1604604
JournalAdvanced Functional Materials
Volume27
Issue number10
DOIs
Publication statusPublished - 2017 Mar 10

Bibliographical note

Funding Information:
This study was supported by the National Research Foundation of Korea Grant funded by the Korean Government (2014R1A2A1A09005656 and 2014R1A2A1A01005046).

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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