We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In3Sb1Te2 (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320°C, with sheet resistances of ~10 kΩsq (amorphous), ~0.2 kΩsq (first phase-change), and ~10sq (second phase-change). MIST did not exhibit any chemical separation or increased structural instability during either phase-change, as determined with high-resolution x-ray photoelectron spectroscopy. Chemical state changes were only depended for In without concomitant changes of Sb and Te. Apparently, doped Mn atoms can be induced with movement of only In atoms.
Bibliographical noteFunding Information:
This research was supported by the Basic Science Research Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2013R1A1A2006284) and the Priority Research Centers Program (2009-0093818). M.-C.J. and Y.B.Q. would like to acknowledge the financial support of the Okinawa Institute of Science and Technology Graduate University, Okinawa, Japan. The authors thank Steven D. Aird, the Technical Editor at Okinawa Institute of Science and Technology Graduate University for valuable suggestions in revising the manuscript.
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