Only the chemical state of Indium changes in Mn-doped In3Sb 1Te2 (Mn: 10 at.%) during multi-level resistance changes

Y. M. Lee, D. Ahn, J. Y. Kim, Y. S. Kim, S. Cho, M. Ahn, M. H. Cho, M. S. Jung, D. K. Choi, M. C. Jung, Y. B. Qi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In3Sb1Te2 (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320°C, with sheet resistances of ~10 kΩsq (amorphous), ~0.2 kΩsq (first phase-change), and ~10sq (second phase-change). MIST did not exhibit any chemical separation or increased structural instability during either phase-change, as determined with high-resolution x-ray photoelectron spectroscopy. Chemical state changes were only depended for In without concomitant changes of Sb and Te. Apparently, doped Mn atoms can be induced with movement of only In atoms.

Original languageEnglish
Article number4702
JournalScientific reports
Volume4
DOIs
Publication statusPublished - 2014 Apr 16

All Science Journal Classification (ASJC) codes

  • General

Fingerprint Dive into the research topics of 'Only the chemical state of Indium changes in Mn-doped In<sub>3</sub>Sb <sub>1</sub>Te<sub>2</sub> (Mn: 10 at.%) during multi-level resistance changes'. Together they form a unique fingerprint.

  • Cite this

    Lee, Y. M., Ahn, D., Kim, J. Y., Kim, Y. S., Cho, S., Ahn, M., Cho, M. H., Jung, M. S., Choi, D. K., Jung, M. C., & Qi, Y. B. (2014). Only the chemical state of Indium changes in Mn-doped In3Sb 1Te2 (Mn: 10 at.%) during multi-level resistance changes. Scientific reports, 4, [4702]. https://doi.org/10.1038/srep04702