Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing

Ji Sang Park, Sunghyun Kim, Samantha N. Hood, Aron Walsh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

There is evidence that interface recombination in Cu2ZnSnS4 solar cells contributes to the open-circuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole recombination at the Cu2ZnSnS4/CdS interface is caused by a deeper conduction band that slows electron extraction. In contrast, the bandgap is not narrowed for the Cu2ZnSnS4/CdS interface, consistent with a lower open-circuit voltage deficit.

Original languageEnglish
Article number212103
JournalApplied Physics Letters
Volume113
Issue number21
DOIs
Publication statusPublished - 2018 Nov 19

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open circuit voltage
solar cells
low voltage
conduction bands
density functional theory
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Park, Ji Sang ; Kim, Sunghyun ; Hood, Samantha N. ; Walsh, Aron. / Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing. In: Applied Physics Letters. 2018 ; Vol. 113, No. 21.
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Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing. / Park, Ji Sang; Kim, Sunghyun; Hood, Samantha N.; Walsh, Aron.

In: Applied Physics Letters, Vol. 113, No. 21, 212103, 19.11.2018.

Research output: Contribution to journalArticle

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