Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing

Ji Sang Park; Sunghyun Kim; Samantha N. Hood; Aron Walsh

doi:10.1063/1.5063793

Open-circuit voltage deficit in Cu₂ZnSnS₄ solar cells by interface bandgap narrowing

Ji Sang Park, Sunghyun Kim, Samantha N. Hood, Aron Walsh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

There is evidence that interface recombination in Cu₂ZnSnS₄ solar cells contributes to the open-circuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole recombination at the Cu₂ZnSnS₄/CdS interface is caused by a deeper conduction band that slows electron extraction. In contrast, the bandgap is not narrowed for the Cu₂ZnSnS₄/CdS interface, consistent with a lower open-circuit voltage deficit.

Original language	English
Article number	212103
Journal	Applied Physics Letters
Volume	113
Issue number	21
DOIs	https://doi.org/10.1063/1.5063793
Publication status	Published - 2018 Nov 19

Bibliographical note

Funding Information:
We thank Andrea Crovetto and Mattias Lau Nøhr Palsgaard for helpful discussion. This project received funding from the European H2020 Framework Programme for research, technological development and demonstration under Grant Agreement No. 720907. See http://www.starcell.eu. Via our membership of the UK’s HPC Materials Chemistry Consortium, which is funded by EPSRC (No. EP/L000202), this work used the ARCHER UK National Supercomputing Service (http://www.archer.ac.uk). We are grateful to the UK Materials and Molecular Modelling Hub for computational resources, which was partially funded by EPSRC (No. EP/

Publisher Copyright:
© 2018 Author(s).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.5063793

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abstract = "There is evidence that interface recombination in Cu2ZnSnS4 solar cells contributes to the open-circuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole recombination at the Cu2ZnSnS4/CdS interface is caused by a deeper conduction band that slows electron extraction. In contrast, the bandgap is not narrowed for the Cu2ZnSnS4/CdS interface, consistent with a lower open-circuit voltage deficit.",

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