Optical activation of Si and Ge nanowires codoping with Er

Yb rare earth by sol-gel methods

Lingling Ren, Won Young Jeung, Hee Chul Han, Heon Jin Choi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.

Original languageEnglish
Pages (from-to)191-196
Number of pages6
JournalJournal of Nanoelectronics and Optoelectronics
Volume2
Issue number2
DOIs
Publication statusPublished - 2007 Dec 1

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Sol-gel process
Rare earths
Nanowires
Photoluminescence
Chemical activation
Ions
Nanocrystals
Energy gap
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{d537bb00950649668c42b494ba8fc58e,
title = "Optical activation of Si and Ge nanowires codoping with Er: Yb rare earth by sol-gel methods",
abstract = "Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.",
author = "Lingling Ren and Jeung, {Won Young} and Han, {Hee Chul} and Choi, {Heon Jin}",
year = "2007",
month = "12",
day = "1",
doi = "10.1166/jno.2007.204",
language = "English",
volume = "2",
pages = "191--196",
journal = "Journal of Nanoelectronics and Optoelectronics",
issn = "1555-130X",
publisher = "American Scientific Publishers",
number = "2",

}

Optical activation of Si and Ge nanowires codoping with Er : Yb rare earth by sol-gel methods. / Ren, Lingling; Jeung, Won Young; Han, Hee Chul; Choi, Heon Jin.

In: Journal of Nanoelectronics and Optoelectronics, Vol. 2, No. 2, 01.12.2007, p. 191-196.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical activation of Si and Ge nanowires codoping with Er

T2 - Yb rare earth by sol-gel methods

AU - Ren, Lingling

AU - Jeung, Won Young

AU - Han, Hee Chul

AU - Choi, Heon Jin

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.

AB - Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.

UR - http://www.scopus.com/inward/record.url?scp=48249120445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48249120445&partnerID=8YFLogxK

U2 - 10.1166/jno.2007.204

DO - 10.1166/jno.2007.204

M3 - Article

VL - 2

SP - 191

EP - 196

JO - Journal of Nanoelectronics and Optoelectronics

JF - Journal of Nanoelectronics and Optoelectronics

SN - 1555-130X

IS - 2

ER -