Abstract
Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.
| Original language | English |
|---|---|
| Pages (from-to) | 191-196 |
| Number of pages | 6 |
| Journal | Journal of Nanoelectronics and Optoelectronics |
| Volume | 2 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2007 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Ren, L., Jeung, W. Y., Han, H. C., & Choi, H. J. (2007). Optical activation of Si and Ge nanowires codoping with Er:Yb rare earth by sol-gel methods. Journal of Nanoelectronics and Optoelectronics, 2(2), 191-196. https://doi.org/10.1166/jno.2007.204