Optical activation of Si and Ge nanowires codoping with Er:Yb rare earth by sol-gel methods

Lingling Ren, Won Young Jeung, Hee Chul Han, Heon Jin Choi

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Abstract

Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.

Original languageEnglish
Pages (from-to)191-196
Number of pages6
JournalJournal of Nanoelectronics and Optoelectronics
Volume2
Issue number2
DOIs
Publication statusPublished - 2007 Dec 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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