Abstract
Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.
| Original language | English |
|---|---|
| Pages (from-to) | 191-196 |
| Number of pages | 6 |
| Journal | Journal of Nanoelectronics and Optoelectronics |
| Volume | 2 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Optical activation of Si and Ge nanowires codoping with Er:Yb rare earth by sol-gel methods. / Ren, Lingling; Jeung, Won Young; Han, Hee Chul; Choi, Heon Jin.
In: Journal of Nanoelectronics and Optoelectronics, Vol. 2, No. 2, 01.12.2007, p. 191-196.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical activation of Si and Ge nanowires codoping with Er:Yb rare earth by sol-gel methods
AU - Ren, Lingling
AU - Jeung, Won Young
AU - Han, Hee Chul
AU - Choi, Heon Jin
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.
AB - Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.
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U2 - 10.1166/jno.2007.204
DO - 10.1166/jno.2007.204
M3 - Article
AN - SCOPUS:48249120445
VL - 2
SP - 191
EP - 196
JO - Journal of Nanoelectronics and Optoelectronics
JF - Journal of Nanoelectronics and Optoelectronics
SN - 1555-130X
IS - 2
ER -