Optical activation of Si and Ge nanowires codoping with Er:Yb rare earth by sol-gel methods

Lingling Ren; Won Young Jeung; Hee Chul Han; Heon Jin Choi

doi:10.1166/jno.2007.204

Optical activation of Si and Ge nanowires codoping with Er:Yb rare earth by sol-gel methods

Lingling Ren, Won Young Jeung, Hee Chul Han, Heon Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.

Original language	English
Pages (from-to)	191-196
Number of pages	6
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	2
Issue number	2
DOIs	https://doi.org/10.1166/jno.2007.204
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.",

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T1 - Optical activation of Si and Ge nanowires codoping with Er:Yb rare earth by sol-gel methods

AU - Ren, Lingling

AU - Jeung, Won Young

AU - Han, Hee Chul

AU - Choi, Heon Jin

PY - 2007

Y1 - 2007

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AB - Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 μm, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol-gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.

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Optical activation of Si and Ge nanowires codoping with Er:Yb rare earth by sol-gel methods

Abstract

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