Abstract
The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er3+ luminescence of 1.534 μm from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er3+ luminescence by excluding concentration quenching while at the same time improving the quality of film.
| Original language | English |
|---|---|
| Pages (from-to) | 497-501 |
| Number of pages | 5 |
| Journal | Optical Materials |
| Volume | 30 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2007 Nov |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Atomic and Molecular Physics, and Optics
- Spectroscopy
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering
Cite this
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Optical activation of Si nanowires by Er3+ doped binary Si-Al oxides films derived from sol-gel solutions. / Ren, Lingling; Jeung, Won Young; Han, Hee Chul; Suh, Kiseok; Shin, Jung H.; Choi, Heon Jin.
In: Optical Materials, Vol. 30, No. 3, 11.2007, p. 497-501.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical activation of Si nanowires by Er3+ doped binary Si-Al oxides films derived from sol-gel solutions
AU - Ren, Lingling
AU - Jeung, Won Young
AU - Han, Hee Chul
AU - Suh, Kiseok
AU - Shin, Jung H.
AU - Choi, Heon Jin
PY - 2007/11
Y1 - 2007/11
N2 - The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er3+ luminescence of 1.534 μm from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er3+ luminescence by excluding concentration quenching while at the same time improving the quality of film.
AB - The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er3+ luminescence of 1.534 μm from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er3+ luminescence by excluding concentration quenching while at the same time improving the quality of film.
UR - http://www.scopus.com/inward/record.url?scp=34948886123&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34948886123&partnerID=8YFLogxK
U2 - 10.1016/j.optmat.2006.12.016
DO - 10.1016/j.optmat.2006.12.016
M3 - Article
AN - SCOPUS:34948886123
VL - 30
SP - 497
EP - 501
JO - Optical Materials
JF - Optical Materials
SN - 0925-3467
IS - 3
ER -