Optical activation of Si nanowires by Er3+ doped binary Si-Al oxides films derived from sol-gel solutions

Lingling Ren, Won Young Jeung, Hee Chul Han, Kiseok Suh, Jung H. Shin, Heon Jin Choi

Research output: Contribution to journalArticlepeer-review

Abstract

The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er3+ luminescence of 1.534 μm from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er3+ luminescence by excluding concentration quenching while at the same time improving the quality of film.

Original languageEnglish
Pages (from-to)497-501
Number of pages5
JournalOptical Materials
Volume30
Issue number3
DOIs
Publication statusPublished - 2007 Nov

Bibliographical note

Funding Information:
This work was supported by Natural Science Foundation of China (60872094, 60832003), the projects of Chinese Ministry of Education (200816460003), the Scientific Research Fund of Zhejiang Provincial Education Department (Z200909361), and the National 863 Project of China (2009AA01Z327).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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