Optical activation of Si nanowires by Er3+ doped binary Si-Al oxides films derived from sol-gel solutions

Lingling Ren, Won Young Jeung, Hee Chul Han, Kiseok Suh, Jung H. Shin, Heon Jin Choi

Research output: Contribution to journalArticlepeer-review


The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er3+ luminescence of 1.534 μm from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er3+ luminescence by excluding concentration quenching while at the same time improving the quality of film.

Original languageEnglish
Pages (from-to)497-501
Number of pages5
JournalOptical Materials
Issue number3
Publication statusPublished - 2007 Nov

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation of the Korea Government (MOEHRD) (KRF-2005-210-C00024), and the Ministry of Information and Communications in Korea and the Basic Research Program in ETRI.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering


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