Optical activation of Si nanowires by Er3+ doped binary Si-Al oxides films derived from sol-gel solutions

Lingling Ren; Won Young Jeung; Hee Chul Han; Kiseok Suh; Jung H. Shin; Heon Jin Choi

doi:10.1016/j.optmat.2006.12.016

Optical activation of Si nanowires by Er³⁺ doped binary Si-Al oxides films derived from sol-gel solutions

Lingling Ren, Won Young Jeung, Hee Chul Han, Kiseok Suh, Jung H. Shin, Heon Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The optical activation of Si nanowires (SiNWs) by the coating of Er³⁺ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er³⁺ luminescence of 1.534 μm from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er³⁺ luminescence by excluding concentration quenching while at the same time improving the quality of film.

Original language	English
Pages (from-to)	497-501
Number of pages	5
Journal	Optical Materials
Volume	30
Issue number	3
DOIs	https://doi.org/10.1016/j.optmat.2006.12.016
Publication status	Published - 2007 Nov

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation of the Korea Government (MOEHRD) (KRF-2005-210-C00024), and the Ministry of Information and Communications in Korea and the Basic Research Program in ETRI.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Computer Science(all)
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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title = "Optical activation of Si nanowires by Er3+ doped binary Si-Al oxides films derived from sol-gel solutions",

abstract = "The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er3+ luminescence of 1.534 μm from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er3+ luminescence by excluding concentration quenching while at the same time improving the quality of film.",

author = "Lingling Ren and Jeung, {Won Young} and Han, {Hee Chul} and Kiseok Suh and Shin, {Jung H.} and Choi, {Heon Jin}",

note = "Funding Information: This work was supported by Korea Research Foundation of the Korea Government (MOEHRD) (KRF-2005-210-C00024), and the Ministry of Information and Communications in Korea and the Basic Research Program in ETRI.",

year = "2007",

month = nov,

doi = "10.1016/j.optmat.2006.12.016",

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T1 - Optical activation of Si nanowires by Er3+ doped binary Si-Al oxides films derived from sol-gel solutions

AU - Ren, Lingling

AU - Jeung, Won Young

AU - Han, Hee Chul

AU - Suh, Kiseok

AU - Shin, Jung H.

AU - Choi, Heon Jin

N1 - Funding Information: This work was supported by Korea Research Foundation of the Korea Government (MOEHRD) (KRF-2005-210-C00024), and the Ministry of Information and Communications in Korea and the Basic Research Program in ETRI.

PY - 2007/11

Y1 - 2007/11

N2 - The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er3+ luminescence of 1.534 μm from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er3+ luminescence by excluding concentration quenching while at the same time improving the quality of film.

AB - The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er3+ luminescence of 1.534 μm from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er3+ luminescence by excluding concentration quenching while at the same time improving the quality of film.

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