Abstract
The optical activation of Si nanowires (SiNWs) by the coating of Er3+ doped binary silicon-aluminum oxides (Si-Al oxides) films derived from sol-gel solutions is reported. Continuous and crack-free Si-Al oxide film could be successfully coated onto an Si substrate where the SiNWs were grown. The strong Er3+ luminescence of 1.534 μm from the SiNWs was observed at a high Er concentration (5 at.%). These results suggest that the Al-Si oxide film makes it possible to realize a strong Er3+ luminescence by excluding concentration quenching while at the same time improving the quality of film.
| Original language | English |
|---|---|
| Pages (from-to) | 497-501 |
| Number of pages | 5 |
| Journal | Optical Materials |
| Volume | 30 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2007 Nov |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Atomic and Molecular Physics, and Optics
- Spectroscopy
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering
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Cite this
Ren, L., Jeung, W. Y., Han, H. C., Suh, K., Shin, J. H., & Choi, H. J. (2007). Optical activation of Si nanowires by Er3+ doped binary Si-Al oxides films derived from sol-gel solutions. Optical Materials, 30(3), 497-501. https://doi.org/10.1016/j.optmat.2006.12.016