Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators

Kyungsoo Jang, Hyeongsik Park, Sungwook Jung, Nguyen Van Duy, Youngkuk Kim, Jaehyun Cho, Hyungwook Choi, Taeyoung Kwon, Wonbaek Lee, Daeyeong Gong, Seungman Park, Junsin Yi, Doyoung Kim, Hyungjun Kim

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Al-doped ZnO (AZO) thin films have been prepared on the c-Si oriented direction of (100) and glass substrates, by radio frequency magnetron sputtering from ZnO-2 wt.% Al2O3 ceramic targets. The effects of the working pressure on the optical and electrical properties of the films have been studied. The optical properties, measured by the ultraviolet-visible system, show that the transmittance and optical bandgap energy are influenced by the working pressure. The Hall resistivity, mobility, and carrier concentration were obtained by a Hall measurement system and these parameters were also influenced by the working pressure. The AZO thin-film transistors (TFTs) were fabricated on highly doped c-Si substrates. The TFT structures were made up AZO as the active layer and SiOxNy/SiNx/SiOx as the gate layer with 20 nm and 35 nm thickness, respectively. The ultra-thin TFTs had an on/off current ratio of 104 and a field-effect mobility of 0.17 cm2/V·s. These results show that it is possible to fabricate an AZO TFT that can be operated with an ultra-thin gate dielectric.

Original languageEnglish
Pages (from-to)2808-2811
Number of pages4
JournalThin Solid Films
Volume518
Issue number10
DOIs
Publication statusPublished - 2010 Mar 1

Fingerprint

Thin film transistors
Electric properties
transistors
Optical properties
electrical properties
insulators
optical properties
thin films
Gate dielectrics
Optical band gaps
Substrates
Magnetron sputtering
Carrier concentration
transmittance
radio frequencies
magnetron sputtering
Glass
Thin films
ceramics
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Jang, Kyungsoo ; Park, Hyeongsik ; Jung, Sungwook ; Van Duy, Nguyen ; Kim, Youngkuk ; Cho, Jaehyun ; Choi, Hyungwook ; Kwon, Taeyoung ; Lee, Wonbaek ; Gong, Daeyeong ; Park, Seungman ; Yi, Junsin ; Kim, Doyoung ; Kim, Hyungjun. / Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators. In: Thin Solid Films. 2010 ; Vol. 518, No. 10. pp. 2808-2811.
@article{4ea884d1453f43c584266a9297c70213,
title = "Optical and electrical properties of 2 wt.{\%} Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators",
abstract = "Al-doped ZnO (AZO) thin films have been prepared on the c-Si oriented direction of (100) and glass substrates, by radio frequency magnetron sputtering from ZnO-2 wt.{\%} Al2O3 ceramic targets. The effects of the working pressure on the optical and electrical properties of the films have been studied. The optical properties, measured by the ultraviolet-visible system, show that the transmittance and optical bandgap energy are influenced by the working pressure. The Hall resistivity, mobility, and carrier concentration were obtained by a Hall measurement system and these parameters were also influenced by the working pressure. The AZO thin-film transistors (TFTs) were fabricated on highly doped c-Si substrates. The TFT structures were made up AZO as the active layer and SiOxNy/SiNx/SiOx as the gate layer with 20 nm and 35 nm thickness, respectively. The ultra-thin TFTs had an on/off current ratio of 104 and a field-effect mobility of 0.17 cm2/V·s. These results show that it is possible to fabricate an AZO TFT that can be operated with an ultra-thin gate dielectric.",
author = "Kyungsoo Jang and Hyeongsik Park and Sungwook Jung and {Van Duy}, Nguyen and Youngkuk Kim and Jaehyun Cho and Hyungwook Choi and Taeyoung Kwon and Wonbaek Lee and Daeyeong Gong and Seungman Park and Junsin Yi and Doyoung Kim and Hyungjun Kim",
year = "2010",
month = "3",
day = "1",
doi = "10.1016/j.tsf.2009.08.036",
language = "English",
volume = "518",
pages = "2808--2811",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "10",

}

Jang, K, Park, H, Jung, S, Van Duy, N, Kim, Y, Cho, J, Choi, H, Kwon, T, Lee, W, Gong, D, Park, S, Yi, J, Kim, D & Kim, H 2010, 'Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators', Thin Solid Films, vol. 518, no. 10, pp. 2808-2811. https://doi.org/10.1016/j.tsf.2009.08.036

Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators. / Jang, Kyungsoo; Park, Hyeongsik; Jung, Sungwook; Van Duy, Nguyen; Kim, Youngkuk; Cho, Jaehyun; Choi, Hyungwook; Kwon, Taeyoung; Lee, Wonbaek; Gong, Daeyeong; Park, Seungman; Yi, Junsin; Kim, Doyoung; Kim, Hyungjun.

In: Thin Solid Films, Vol. 518, No. 10, 01.03.2010, p. 2808-2811.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators

AU - Jang, Kyungsoo

AU - Park, Hyeongsik

AU - Jung, Sungwook

AU - Van Duy, Nguyen

AU - Kim, Youngkuk

AU - Cho, Jaehyun

AU - Choi, Hyungwook

AU - Kwon, Taeyoung

AU - Lee, Wonbaek

AU - Gong, Daeyeong

AU - Park, Seungman

AU - Yi, Junsin

AU - Kim, Doyoung

AU - Kim, Hyungjun

PY - 2010/3/1

Y1 - 2010/3/1

N2 - Al-doped ZnO (AZO) thin films have been prepared on the c-Si oriented direction of (100) and glass substrates, by radio frequency magnetron sputtering from ZnO-2 wt.% Al2O3 ceramic targets. The effects of the working pressure on the optical and electrical properties of the films have been studied. The optical properties, measured by the ultraviolet-visible system, show that the transmittance and optical bandgap energy are influenced by the working pressure. The Hall resistivity, mobility, and carrier concentration were obtained by a Hall measurement system and these parameters were also influenced by the working pressure. The AZO thin-film transistors (TFTs) were fabricated on highly doped c-Si substrates. The TFT structures were made up AZO as the active layer and SiOxNy/SiNx/SiOx as the gate layer with 20 nm and 35 nm thickness, respectively. The ultra-thin TFTs had an on/off current ratio of 104 and a field-effect mobility of 0.17 cm2/V·s. These results show that it is possible to fabricate an AZO TFT that can be operated with an ultra-thin gate dielectric.

AB - Al-doped ZnO (AZO) thin films have been prepared on the c-Si oriented direction of (100) and glass substrates, by radio frequency magnetron sputtering from ZnO-2 wt.% Al2O3 ceramic targets. The effects of the working pressure on the optical and electrical properties of the films have been studied. The optical properties, measured by the ultraviolet-visible system, show that the transmittance and optical bandgap energy are influenced by the working pressure. The Hall resistivity, mobility, and carrier concentration were obtained by a Hall measurement system and these parameters were also influenced by the working pressure. The AZO thin-film transistors (TFTs) were fabricated on highly doped c-Si substrates. The TFT structures were made up AZO as the active layer and SiOxNy/SiNx/SiOx as the gate layer with 20 nm and 35 nm thickness, respectively. The ultra-thin TFTs had an on/off current ratio of 104 and a field-effect mobility of 0.17 cm2/V·s. These results show that it is possible to fabricate an AZO TFT that can be operated with an ultra-thin gate dielectric.

UR - http://www.scopus.com/inward/record.url?scp=76049113550&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76049113550&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.08.036

DO - 10.1016/j.tsf.2009.08.036

M3 - Article

VL - 518

SP - 2808

EP - 2811

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 10

ER -