Abstract
Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature while those of 80 keV were into the same SiO2 layer on p-Si. Samples were, subsequently, annealed at 500 °C for 2 h to effectively induce radiative defects in the SiO2. Maximum intensities of sharp violet photoluminescence (PL) from the SiO2/n-Si and the SiO2/p-Si samples were observed when the samples have been implanted with doses of 1×1016 and 5×1015 cm-2, respectively. According to current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100 °C for 4 h show the leakage at both the reverse and the forward region.
| Original language | English |
|---|---|
| Pages (from-to) | 463-467 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 169-170 |
| DOIs | |
| Publication status | Published - 2001 Jan 15 |
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All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
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Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si. / Lee, W. S.; Jeong, J. Y.; Kim, H. B.; Chae, K. H.; Whang, C. N.; Im, Seongil; Song, J. H.
In: Applied Surface Science, Vol. 169-170, 15.01.2001, p. 463-467.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si
AU - Lee, W. S.
AU - Jeong, J. Y.
AU - Kim, H. B.
AU - Chae, K. H.
AU - Whang, C. N.
AU - Im, Seongil
AU - Song, J. H.
PY - 2001/1/15
Y1 - 2001/1/15
N2 - Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature while those of 80 keV were into the same SiO2 layer on p-Si. Samples were, subsequently, annealed at 500 °C for 2 h to effectively induce radiative defects in the SiO2. Maximum intensities of sharp violet photoluminescence (PL) from the SiO2/n-Si and the SiO2/p-Si samples were observed when the samples have been implanted with doses of 1×1016 and 5×1015 cm-2, respectively. According to current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100 °C for 4 h show the leakage at both the reverse and the forward region.
AB - Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature while those of 80 keV were into the same SiO2 layer on p-Si. Samples were, subsequently, annealed at 500 °C for 2 h to effectively induce radiative defects in the SiO2. Maximum intensities of sharp violet photoluminescence (PL) from the SiO2/n-Si and the SiO2/p-Si samples were observed when the samples have been implanted with doses of 1×1016 and 5×1015 cm-2, respectively. According to current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100 °C for 4 h show the leakage at both the reverse and the forward region.
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U2 - 10.1016/S0169-4332(00)00704-2
DO - 10.1016/S0169-4332(00)00704-2
M3 - Article
AN - SCOPUS:0035127366
VL - 169-170
SP - 463
EP - 467
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -