Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si

W. S. Lee; J. Y. Jeong; H. B. Kim; K. H. Chae; C. N. Whang; S. Im; J. H. Song

doi:10.1016/S0169-4332(00)00704-2

Optical and electrical properties of Ge-implanted SiO₂ layers on n-Si and p-Si

W. S. Lee, J. Y. Jeong, H. B. Kim, K. H. Chae, C. N. Whang, S. Im, J. H. Song

Department of Physics

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

Ge ions of 100 keV were implanted into a 120 nm-thick SiO₂ layer on n-Si at room temperature while those of 80 keV were into the same SiO₂ layer on p-Si. Samples were, subsequently, annealed at 500 °C for 2 h to effectively induce radiative defects in the SiO₂. Maximum intensities of sharp violet photoluminescence (PL) from the SiO₂/n-Si and the SiO₂/p-Si samples were observed when the samples have been implanted with doses of 1×10¹⁶ and 5×10¹⁵ cm^-2, respectively. According to current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100 °C for 4 h show the leakage at both the reverse and the forward region.

Original language	English
Pages (from-to)	463-467
Number of pages	5
Journal	Applied Surface Science
Volume	169-170
DOIs	https://doi.org/10.1016/S0169-4332(00)00704-2
Publication status	Published - 2001 Jan 15

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Lee, W. S., Jeong, J. Y., Kim, H. B., Chae, K. H., Whang, C. N., Im, S., & Song, J. H. (2001). Optical and electrical properties of Ge-implanted SiO₂ layers on n-Si and p-Si. Applied Surface Science, 169-170, 463-467. https://doi.org/10.1016/S0169-4332(00)00704-2

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title = "Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si",

abstract = "Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature while those of 80 keV were into the same SiO2 layer on p-Si. Samples were, subsequently, annealed at 500 °C for 2 h to effectively induce radiative defects in the SiO2. Maximum intensities of sharp violet photoluminescence (PL) from the SiO2/n-Si and the SiO2/p-Si samples were observed when the samples have been implanted with doses of 1×1016 and 5×1015 cm-2, respectively. According to current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100 °C for 4 h show the leakage at both the reverse and the forward region.",

author = "Lee, {W. S.} and Jeong, {J. Y.} and Kim, {H. B.} and Chae, {K. H.} and Whang, {C. N.} and S. Im and Song, {J. H.}",

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T1 - Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si

AU - Lee, W. S.

AU - Jeong, J. Y.

AU - Kim, H. B.

AU - Chae, K. H.

AU - Whang, C. N.

AU - Im, S.

AU - Song, J. H.

PY - 2001/1/15

Y1 - 2001/1/15

N2 - Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature while those of 80 keV were into the same SiO2 layer on p-Si. Samples were, subsequently, annealed at 500 °C for 2 h to effectively induce radiative defects in the SiO2. Maximum intensities of sharp violet photoluminescence (PL) from the SiO2/n-Si and the SiO2/p-Si samples were observed when the samples have been implanted with doses of 1×1016 and 5×1015 cm-2, respectively. According to current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100 °C for 4 h show the leakage at both the reverse and the forward region.

AB - Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature while those of 80 keV were into the same SiO2 layer on p-Si. Samples were, subsequently, annealed at 500 °C for 2 h to effectively induce radiative defects in the SiO2. Maximum intensities of sharp violet photoluminescence (PL) from the SiO2/n-Si and the SiO2/p-Si samples were observed when the samples have been implanted with doses of 1×1016 and 5×1015 cm-2, respectively. According to current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100 °C for 4 h show the leakage at both the reverse and the forward region.

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JO - Applied Surface Science

JF - Applied Surface Science

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