Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si

W. S. Lee, J. Y. Jeong, H. B. Kim, K. H. Chae, C. N. Whang, Seongil Im, J. H. Song

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature while those of 80 keV were into the same SiO2 layer on p-Si. Samples were, subsequently, annealed at 500 °C for 2 h to effectively induce radiative defects in the SiO2. Maximum intensities of sharp violet photoluminescence (PL) from the SiO2/n-Si and the SiO2/p-Si samples were observed when the samples have been implanted with doses of 1×1016 and 5×1015 cm-2, respectively. According to current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100 °C for 4 h show the leakage at both the reverse and the forward region.

Original languageEnglish
Pages (from-to)463-467
Number of pages5
JournalApplied Surface Science
Volume169-170
DOIs
Publication statusPublished - 2001 Jan 15

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Electric properties
Optical properties
Defects
Electroluminescence
Leakage currents
Nanocrystals
Photoluminescence
Annealing
Ions
Electric potential
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Lee, W. S., Jeong, J. Y., Kim, H. B., Chae, K. H., Whang, C. N., Im, S., & Song, J. H. (2001). Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si. Applied Surface Science, 169-170, 463-467. https://doi.org/10.1016/S0169-4332(00)00704-2
Lee, W. S. ; Jeong, J. Y. ; Kim, H. B. ; Chae, K. H. ; Whang, C. N. ; Im, Seongil ; Song, J. H. / Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si. In: Applied Surface Science. 2001 ; Vol. 169-170. pp. 463-467.
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Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si. / Lee, W. S.; Jeong, J. Y.; Kim, H. B.; Chae, K. H.; Whang, C. N.; Im, Seongil; Song, J. H.

In: Applied Surface Science, Vol. 169-170, 15.01.2001, p. 463-467.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si

AU - Lee, W. S.

AU - Jeong, J. Y.

AU - Kim, H. B.

AU - Chae, K. H.

AU - Whang, C. N.

AU - Im, Seongil

AU - Song, J. H.

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AB - Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature while those of 80 keV were into the same SiO2 layer on p-Si. Samples were, subsequently, annealed at 500 °C for 2 h to effectively induce radiative defects in the SiO2. Maximum intensities of sharp violet photoluminescence (PL) from the SiO2/n-Si and the SiO2/p-Si samples were observed when the samples have been implanted with doses of 1×1016 and 5×1015 cm-2, respectively. According to current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100 °C for 4 h show the leakage at both the reverse and the forward region.

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