Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature while those of 80 keV were into the same SiO2 layer on p-Si. Samples were, subsequently, annealed at 500 °C for 2 h to effectively induce radiative defects in the SiO2. Maximum intensities of sharp violet photoluminescence (PL) from the SiO2/n-Si and the SiO2/p-Si samples were observed when the samples have been implanted with doses of 1×1016 and 5×1015 cm-2, respectively. According to current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100 °C for 4 h show the leakage at both the reverse and the forward region.
Bibliographical noteFunding Information:
Authors would like to thank Prof. W. Choi in the electronic department of Yonsei University for valuable discussion on the carrier-transport mechanism. This work was supported in part by the Korea Science and Engineering Foundation (KOSEF) through the ASSRC at Yonsei University, and the grants from KOSEF (1999-2-114-004-5).
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films