Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si

W. S. Lee, J. Y. Jeong, H. B. Kim, K. H. Chae, C. N. Whang, S. Im, J. H. Song

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5 Citations (Scopus)

Abstract

Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature while those of 80 keV were into the same SiO2 layer on p-Si. Samples were, subsequently, annealed at 500 °C for 2 h to effectively induce radiative defects in the SiO2. Maximum intensities of sharp violet photoluminescence (PL) from the SiO2/n-Si and the SiO2/p-Si samples were observed when the samples have been implanted with doses of 1×1016 and 5×1015 cm-2, respectively. According to current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100 °C for 4 h show the leakage at both the reverse and the forward region.

Original languageEnglish
Pages (from-to)463-467
Number of pages5
JournalApplied Surface Science
Volume169-170
DOIs
Publication statusPublished - 2001 Jan 15

Bibliographical note

Funding Information:
Authors would like to thank Prof. W. Choi in the electronic department of Yonsei University for valuable discussion on the carrier-transport mechanism. This work was supported in part by the Korea Science and Engineering Foundation (KOSEF) through the ASSRC at Yonsei University, and the grants from KOSEF (1999-2-114-004-5).

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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