The optical and electrical transport properties of single-crystalline silicon carbide (SiC) nanowires (NW) were discussed. Investigations show tha the SiC NW were instrinsic n-type semiconductors. The electrical measurements show that SiC NW had weak gating effect, low resistivity and low electron mobility. The data collected illustrated that the SiC NW were used in designing the high temperature operation sensors, detectors and actuators.
Bibliographical noteFunding Information:
This work was supported by the National Program for Nanostructured Materials Technology of the Korea Ministry of Science and Technology as one of the 21st Century Frontier Program (No. 04K1501-01710), the Nano R&D program, and a grant from KIST (No. 2E17745).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)