Optical and electrical transport properties in silicon carbide nanowires

Han Kyu Seong, Heon-Jin Choi, Sang Kwon Lee, Jung Il Lee, Doo Jin Choi

Research output: Contribution to journalArticle

197 Citations (Scopus)

Abstract

The optical and electrical transport properties of single-crystalline silicon carbide (SiC) nanowires (NW) were discussed. Investigations show tha the SiC NW were instrinsic n-type semiconductors. The electrical measurements show that SiC NW had weak gating effect, low resistivity and low electron mobility. The data collected illustrated that the SiC NW were used in designing the high temperature operation sensors, detectors and actuators.

Original languageEnglish
Pages (from-to)1256-1258
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number7
DOIs
Publication statusPublished - 2004 Aug 16

Fingerprint

silicon carbides
nanowires
transport properties
n-type semiconductors
electron mobility
electrical measurement
actuators
electrical resistivity
sensors
detectors

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Seong, Han Kyu ; Choi, Heon-Jin ; Lee, Sang Kwon ; Lee, Jung Il ; Choi, Doo Jin. / Optical and electrical transport properties in silicon carbide nanowires. In: Applied Physics Letters. 2004 ; Vol. 85, No. 7. pp. 1256-1258.
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Optical and electrical transport properties in silicon carbide nanowires. / Seong, Han Kyu; Choi, Heon-Jin; Lee, Sang Kwon; Lee, Jung Il; Choi, Doo Jin.

In: Applied Physics Letters, Vol. 85, No. 7, 16.08.2004, p. 1256-1258.

Research output: Contribution to journalArticle

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