Abstract
We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.
| Original language | English |
|---|---|
| Pages (from-to) | 2872-2874 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 80 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2002 Apr 22 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Park, S. P., Kim, S. S., Kim, J. H., Whang, C. N., & Im, S. (2002). Optical and luminescence characteristics of thermally evaporated pentacene films on Si. Applied Physics Letters, 80(16), 2872-2874. https://doi.org/10.1063/1.1471929