Optical and luminescence characteristics of thermally evaporated pentacene films on Si

S. P. Park; S. S. Kim; J. H. Kim; C. N. Whang; S. Im

doi:10.1063/1.1471929

Optical and luminescence characteristics of thermally evaporated pentacene films on Si

S. P. Park, S. S. Kim, J. H. Kim, C. N. Whang, S. Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

116 Citations (Scopus)

Abstract

We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.

Original language	English
Pages (from-to)	2872-2874
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	16
DOIs	https://doi.org/10.1063/1.1471929
Publication status	Published - 2002 Apr 22

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1471929

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title = "Optical and luminescence characteristics of thermally evaporated pentacene films on Si",

abstract = "We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.",

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AU - Park, S. P.

AU - Kim, S. S.

AU - Kim, J. H.

AU - Whang, C. N.

AU - Im, S.

PY - 2002/4/22

Y1 - 2002/4/22

N2 - We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.

AB - We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.

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Optical and luminescence characteristics of thermally evaporated pentacene films on Si

Abstract

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