Optical and luminescence characteristics of thermally evaporated pentacene films on Si

S. P. Park, S. S. Kim, J. H. Kim, C. N. Whang, S. Im

Research output: Contribution to journalArticle

112 Citations (Scopus)

Abstract

We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.

Original languageEnglish
Pages (from-to)2872-2874
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number16
DOIs
Publication statusPublished - 2002 Apr 22

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luminescence
room temperature
electroluminescence
energy levels
diodes
excitons
evaporation
photoluminescence
optical properties

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Park, S. P. ; Kim, S. S. ; Kim, J. H. ; Whang, C. N. ; Im, S. / Optical and luminescence characteristics of thermally evaporated pentacene films on Si. In: Applied Physics Letters. 2002 ; Vol. 80, No. 16. pp. 2872-2874.
@article{58fd7ae6fe914f34a508946a01317b14,
title = "Optical and luminescence characteristics of thermally evaporated pentacene films on Si",
abstract = "We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.",
author = "Park, {S. P.} and Kim, {S. S.} and Kim, {J. H.} and Whang, {C. N.} and S. Im",
year = "2002",
month = "4",
day = "22",
doi = "10.1063/1.1471929",
language = "English",
volume = "80",
pages = "2872--2874",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

Optical and luminescence characteristics of thermally evaporated pentacene films on Si. / Park, S. P.; Kim, S. S.; Kim, J. H.; Whang, C. N.; Im, S.

In: Applied Physics Letters, Vol. 80, No. 16, 22.04.2002, p. 2872-2874.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical and luminescence characteristics of thermally evaporated pentacene films on Si

AU - Park, S. P.

AU - Kim, S. S.

AU - Kim, J. H.

AU - Whang, C. N.

AU - Im, S.

PY - 2002/4/22

Y1 - 2002/4/22

N2 - We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.

AB - We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.

UR - http://www.scopus.com/inward/record.url?scp=79956006269&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956006269&partnerID=8YFLogxK

U2 - 10.1063/1.1471929

DO - 10.1063/1.1471929

M3 - Article

AN - SCOPUS:79956006269

VL - 80

SP - 2872

EP - 2874

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -