Abstract
We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.
Original language | English |
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Pages (from-to) | 2872-2874 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2002 Apr 22 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)