Abstract
We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.
| Original language | English |
|---|---|
| Pages (from-to) | 2872-2874 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 80 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2002 Apr 22 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Optical and luminescence characteristics of thermally evaporated pentacene films on Si. / Park, S. P.; Kim, S. S.; Kim, J. H.; Whang, C. N.; Im, S.
In: Applied Physics Letters, Vol. 80, No. 16, 22.04.2002, p. 2872-2874.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical and luminescence characteristics of thermally evaporated pentacene films on Si
AU - Park, S. P.
AU - Kim, S. S.
AU - Kim, J. H.
AU - Whang, C. N.
AU - Im, S.
PY - 2002/4/22
Y1 - 2002/4/22
N2 - We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.
AB - We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.
UR - http://www.scopus.com/inward/record.url?scp=79956006269&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79956006269&partnerID=8YFLogxK
U2 - 10.1063/1.1471929
DO - 10.1063/1.1471929
M3 - Article
AN - SCOPUS:79956006269
VL - 80
SP - 2872
EP - 2874
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 16
ER -