Optical and luminescence characteristics of thermally evaporated pentacene films on Si

S. P. Park, S. S. Kim, J. H. Kim, C. N. Whang, S. Im

Research output: Contribution to journalArticlepeer-review

115 Citations (Scopus)

Abstract

We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.

Original languageEnglish
Pages (from-to)2872-2874
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number16
DOIs
Publication statusPublished - 2002 Apr 22

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Optical and luminescence characteristics of thermally evaporated pentacene films on Si'. Together they form a unique fingerprint.

Cite this