We investigated the effects of different growth conditions and surface passivation on the growth of CdSe quantum dots (QDs). The synthesis of CdSe QDs by pyrolysis of organometallic reagents was performed by using the hot-matrix method. In order to modify the size and quality of CdSe QDs, we controlled the growth temperature from 250 °C to 350 °C and the relative amount of trioctylphosphin (as the ligand of the Cd and Se precursors) to be injected into the coordinating solvent trioctylphosphineoxide. Moreover, an effective surface passivation of mono-disperse CdSe QDs was achieved by overcoating them with a larger band gap material, such as ZnS.
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