Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy

J. M. Myoung, K. H. Shim, C. Kim, O. Gluschenkov, K. Kim, S. Kim, D. A. Turnbull, S. G. Bishop

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Abstract

Using a molecular beam epitaxy system equipped with an inductively coupled radio frequency nitrogen plasma source, p-type GaN films were grown on sapphire substrates with no postgrowth treatment. Uniformity of the surface morphology and spatial homogeneity of the luminescence of the films were investigated using scanning electron microscopy and cathodoluminescence (CL) imaging, respectively. By examining the dependence of photoluminescence on the excitation laser power density at 6 and 300 K, three different emissions having different origins were identified. A blue emission at ∼3.25 eV is associated with shallow Mg impurities, while two different lower-energy emissions at ∼2.43 and ∼2.87 eV are associated with deep Mg complexes. The spatial distributions of the shallow and deep Mg impurities dominating the optical properties of the p-type GaN films were also examined along the growth direction by low- and room-temperature CL using an electron beam with a range of penetration depths

Original languageEnglish
Pages (from-to)2722-2724
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number18
DOIs
Publication statusPublished - 1996 Oct 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Myoung, J. M., Shim, K. H., Kim, C., Gluschenkov, O., Kim, K., Kim, S., Turnbull, D. A., & Bishop, S. G. (1996). Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 69(18), 2722-2724. https://doi.org/10.1063/1.117690