Optical investigation of ferromagnetic Ga1-xMnxN layers grown on sapphire (0 0 0 1) substrates

I. T. Yoon, J. M. Myoung

Research output: Contribution to journalArticle

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Abstract

We have investigated the temperature-dependent photoluminescence (PL) spectra in Ga1-xMnxN layers (where x≈0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. All the layers doped with manganese exhibited n-type conductivity with Curie temperature over 350 K. The efficient PL are peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. It was found that the blue band at 3.29 eV is mostly associated with the formation complexes between donors (e.g., N vacancy) and Mn acceptors, which results in forming donor levels at 0.23 eV below the conduction band edge. The yellow band is attributed to intrinsic gallium defects. The broad band at 1.86 eV is attributed to inner 5D state transition (T2 to E) of Mn ions.

Original languageEnglish
Pages (from-to)3009-3013
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number9
DOIs
Publication statusPublished - 2008 Aug 1

Fingerprint

Aluminum Oxide
Sapphire
Photoluminescence
sapphire
photoluminescence
Gallium
Substrates
Curie temperature
Manganese
Conduction bands
Molecular beam epitaxy
Vacancies
gallium
manganese
conduction bands
molecular beam epitaxy
Ions
broadband
Plasmas
conductivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

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title = "Optical investigation of ferromagnetic Ga1-xMnxN layers grown on sapphire (0 0 0 1) substrates",
abstract = "We have investigated the temperature-dependent photoluminescence (PL) spectra in Ga1-xMnxN layers (where x≈0.1-0.8{\%}) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. All the layers doped with manganese exhibited n-type conductivity with Curie temperature over 350 K. The efficient PL are peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. It was found that the blue band at 3.29 eV is mostly associated with the formation complexes between donors (e.g., N vacancy) and Mn acceptors, which results in forming donor levels at 0.23 eV below the conduction band edge. The yellow band is attributed to intrinsic gallium defects. The broad band at 1.86 eV is attributed to inner 5D state transition (T2 to E) of Mn ions.",
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Optical investigation of ferromagnetic Ga1-xMnxN layers grown on sapphire (0 0 0 1) substrates. / Yoon, I. T.; Myoung, J. M.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 40, No. 9, 01.08.2008, p. 3009-3013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical investigation of ferromagnetic Ga1-xMnxN layers grown on sapphire (0 0 0 1) substrates

AU - Yoon, I. T.

AU - Myoung, J. M.

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N2 - We have investigated the temperature-dependent photoluminescence (PL) spectra in Ga1-xMnxN layers (where x≈0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. All the layers doped with manganese exhibited n-type conductivity with Curie temperature over 350 K. The efficient PL are peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. It was found that the blue band at 3.29 eV is mostly associated with the formation complexes between donors (e.g., N vacancy) and Mn acceptors, which results in forming donor levels at 0.23 eV below the conduction band edge. The yellow band is attributed to intrinsic gallium defects. The broad band at 1.86 eV is attributed to inner 5D state transition (T2 to E) of Mn ions.

AB - We have investigated the temperature-dependent photoluminescence (PL) spectra in Ga1-xMnxN layers (where x≈0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. All the layers doped with manganese exhibited n-type conductivity with Curie temperature over 350 K. The efficient PL are peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. It was found that the blue band at 3.29 eV is mostly associated with the formation complexes between donors (e.g., N vacancy) and Mn acceptors, which results in forming donor levels at 0.23 eV below the conduction band edge. The yellow band is attributed to intrinsic gallium defects. The broad band at 1.86 eV is attributed to inner 5D state transition (T2 to E) of Mn ions.

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