Optical investigation of ferromagnetic Ga1-xMnxN layers grown on sapphire (0 0 0 1) substrates

I. T. Yoon; J. M. Myoung

doi:10.1016/j.physe.2008.03.010

Optical investigation of ferromagnetic Ga_1-xMn_xN layers grown on sapphire (0 0 0 1) substrates

I. T. Yoon, J. M. Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have investigated the temperature-dependent photoluminescence (PL) spectra in Ga_1-xMn_xN layers (where x≈0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. All the layers doped with manganese exhibited n-type conductivity with Curie temperature over 350 K. The efficient PL are peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. It was found that the blue band at 3.29 eV is mostly associated with the formation complexes between donors (e.g., N vacancy) and Mn acceptors, which results in forming donor levels at 0.23 eV below the conduction band edge. The yellow band is attributed to intrinsic gallium defects. The broad band at 1.86 eV is attributed to inner ⁵D state transition (T₂ to E) of Mn ions.

Original language	English
Pages (from-to)	3009-3013
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	9
DOIs	https://doi.org/10.1016/j.physe.2008.03.010
Publication status	Published - 2008 Aug

Bibliographical note

Funding Information:
This work was supported by the Quantum-functional Semiconductor Research Center at Dongguk University in 2008.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/j.physe.2008.03.010

Cite this

@article{9bc2ee7858f44358a31c596e9792c810,

title = "Optical investigation of ferromagnetic Ga1-xMnxN layers grown on sapphire (0 0 0 1) substrates",

abstract = "We have investigated the temperature-dependent photoluminescence (PL) spectra in Ga1-xMnxN layers (where x≈0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. All the layers doped with manganese exhibited n-type conductivity with Curie temperature over 350 K. The efficient PL are peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. It was found that the blue band at 3.29 eV is mostly associated with the formation complexes between donors (e.g., N vacancy) and Mn acceptors, which results in forming donor levels at 0.23 eV below the conduction band edge. The yellow band is attributed to intrinsic gallium defects. The broad band at 1.86 eV is attributed to inner 5D state transition (T2 to E) of Mn ions.",

author = "Yoon, {I. T.} and Myoung, {J. M.}",

note = "Funding Information: This work was supported by the Quantum-functional Semiconductor Research Center at Dongguk University in 2008.",

year = "2008",

month = aug,

doi = "10.1016/j.physe.2008.03.010",

language = "English",

volume = "40",

pages = "3009--3013",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

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}

TY - JOUR

T1 - Optical investigation of ferromagnetic Ga1-xMnxN layers grown on sapphire (0 0 0 1) substrates

AU - Yoon, I. T.

AU - Myoung, J. M.

N1 - Funding Information: This work was supported by the Quantum-functional Semiconductor Research Center at Dongguk University in 2008.

PY - 2008/8

Y1 - 2008/8

N2 - We have investigated the temperature-dependent photoluminescence (PL) spectra in Ga1-xMnxN layers (where x≈0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. All the layers doped with manganese exhibited n-type conductivity with Curie temperature over 350 K. The efficient PL are peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. It was found that the blue band at 3.29 eV is mostly associated with the formation complexes between donors (e.g., N vacancy) and Mn acceptors, which results in forming donor levels at 0.23 eV below the conduction band edge. The yellow band is attributed to intrinsic gallium defects. The broad band at 1.86 eV is attributed to inner 5D state transition (T2 to E) of Mn ions.

AB - We have investigated the temperature-dependent photoluminescence (PL) spectra in Ga1-xMnxN layers (where x≈0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. All the layers doped with manganese exhibited n-type conductivity with Curie temperature over 350 K. The efficient PL are peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. It was found that the blue band at 3.29 eV is mostly associated with the formation complexes between donors (e.g., N vacancy) and Mn acceptors, which results in forming donor levels at 0.23 eV below the conduction band edge. The yellow band is attributed to intrinsic gallium defects. The broad band at 1.86 eV is attributed to inner 5D state transition (T2 to E) of Mn ions.

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