Abstract
We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P+/N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.
| Original language | English |
|---|---|
| Article number | 6847107 |
| Journal | IEEE Journal on Selected Topics in Quantum Electronics |
| Volume | 20 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2014 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
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Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors. / Lee, Myung Jae; Rücker, Holger; Choi, Woo Young.
In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 20, No. 6, 6847107, 01.11.2014.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors
AU - Lee, Myung Jae
AU - Rücker, Holger
AU - Choi, Woo Young
PY - 2014/11/1
Y1 - 2014/11/1
N2 - We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P+/N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.
AB - We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P+/N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.
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UR - http://www.scopus.com/inward/citedby.url?scp=84933535817&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2014.2327796
DO - 10.1109/JSTQE.2014.2327796
M3 - Article
AN - SCOPUS:84933535817
VL - 20
JO - IEEE Journal on Selected Topics in Quantum Electronics
JF - IEEE Journal on Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 6
M1 - 6847107
ER -