Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors

Myung Jae Lee; Holger Rücker; Woo Young Choi

doi:10.1109/JSTQE.2014.2327796

Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors

Myung Jae Lee, Holger Rücker, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P⁺/N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.

Original language	English
Article number	6847107
Pages (from-to)	211-217
Number of pages	7
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	20
Issue number	6
DOIs	https://doi.org/10.1109/JSTQE.2014.2327796
Publication status	Published - 2014 Nov 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea grant funded by the Korea government [2012R1A2A1A01009233]. The authors would like to thank IC Design Education Center (IDEC) for EDA software support and chip fabrication.

Publisher Copyright:
© 1995-2012 IEEE.

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/JSTQE.2014.2327796

Cite this

@article{a8b6c92b42344f7ab9ae2b39fd5bb2c7,

title = "Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors",

abstract = "We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P+/N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.",

author = "Lee, {Myung Jae} and Holger R{\"u}cker and Choi, {Woo Young}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea grant funded by the Korea government [2012R1A2A1A01009233]. The authors would like to thank IC Design Education Center (IDEC) for EDA software support and chip fabrication. Publisher Copyright: {\textcopyright} 1995-2012 IEEE.",

year = "2014",

month = nov,

day = "1",

doi = "10.1109/JSTQE.2014.2327796",

language = "English",

volume = "20",

pages = "211--217",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors

AU - Lee, Myung Jae

AU - Rücker, Holger

AU - Choi, Woo Young

N1 - Funding Information: This work was supported by the National Research Foundation of Korea grant funded by the Korea government [2012R1A2A1A01009233]. The authors would like to thank IC Design Education Center (IDEC) for EDA software support and chip fabrication. Publisher Copyright: © 1995-2012 IEEE.

PY - 2014/11/1

Y1 - 2014/11/1

N2 - We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P+/N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.

AB - We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P+/N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.

UR - http://www.scopus.com/inward/record.url?scp=84933535817&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84933535817&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2014.2327796

DO - 10.1109/JSTQE.2014.2327796

M3 - Article

AN - SCOPUS:84933535817

VL - 20

SP - 211

EP - 217

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 6

M1 - 6847107

ER -

Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this