Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors

Myung Jae Lee, Holger Rücker, Woo Young Choi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P+/N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.

Original languageEnglish
Article number6847107
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume20
Issue number6
DOIs
Publication statusPublished - 2014 Nov 1

Fingerprint

Photodetectors
avalanches
photometers
CMOS
bandwidth
Bandwidth
Silicon
Frequency response
silicon
Optical receivers
Optical interconnects
Power spectral density
Current voltage characteristics
Electric breakdown
Equivalent circuits
frequency response
optical interconnects
electrical faults
equivalent circuits
receivers

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

@article{a8b6c92b42344f7ab9ae2b39fd5bb2c7,
title = "Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors",
abstract = "We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P+/N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.",
author = "Lee, {Myung Jae} and Holger R{\"u}cker and Choi, {Woo Young}",
year = "2014",
month = "11",
day = "1",
doi = "10.1109/JSTQE.2014.2327796",
language = "English",
volume = "20",
journal = "IEEE Journal on Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors. / Lee, Myung Jae; Rücker, Holger; Choi, Woo Young.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 20, No. 6, 6847107, 01.11.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors

AU - Lee, Myung Jae

AU - Rücker, Holger

AU - Choi, Woo Young

PY - 2014/11/1

Y1 - 2014/11/1

N2 - We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P+/N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.

AB - We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P+/N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.

UR - http://www.scopus.com/inward/record.url?scp=84933535817&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84933535817&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2014.2327796

DO - 10.1109/JSTQE.2014.2327796

M3 - Article

AN - SCOPUS:84933535817

VL - 20

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 6

M1 - 6847107

ER -