Optical properties of GaN and GaMnN nanowires grown on sapphire substrates

Eunsoon Oh, Jung Ho Choi, Han Kyu Seong, Heon Jin Choi

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The authors discussed the photoluminescence (PL) spectra of GaN and GaMnN nanowires grown on sapphire substrates. Comparison of the excitonic PL peak energy with bulk GaN indicates that the strain of the nanowires is fully relaxed. For GaMnN nanowires, the redshift of the PL peak with increasing temperature was larger than that of the GaN nanowires, which was explained by redistribution of carriers into localization sites. The absence of Zeeman shift and circular polarization in GaMnN nanowires indicates that the exchange interaction between carriers and Mn2+ has to be at least one order of magnitude smaller than that in Cd0.94Mn0.06S nanowires.

Original languageEnglish
Article number092109
JournalApplied Physics Letters
Volume89
Issue number9
DOIs
Publication statusPublished - 2006 Sep 8

Fingerprint

sapphire
nanowires
optical properties
photoluminescence
circular polarization
shift
polarization
interactions
temperature
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Oh, Eunsoon ; Choi, Jung Ho ; Seong, Han Kyu ; Choi, Heon Jin. / Optical properties of GaN and GaMnN nanowires grown on sapphire substrates. In: Applied Physics Letters. 2006 ; Vol. 89, No. 9.
@article{4059416bd7b64bb89e3498135e575891,
title = "Optical properties of GaN and GaMnN nanowires grown on sapphire substrates",
abstract = "The authors discussed the photoluminescence (PL) spectra of GaN and GaMnN nanowires grown on sapphire substrates. Comparison of the excitonic PL peak energy with bulk GaN indicates that the strain of the nanowires is fully relaxed. For GaMnN nanowires, the redshift of the PL peak with increasing temperature was larger than that of the GaN nanowires, which was explained by redistribution of carriers into localization sites. The absence of Zeeman shift and circular polarization in GaMnN nanowires indicates that the exchange interaction between carriers and Mn2+ has to be at least one order of magnitude smaller than that in Cd0.94Mn0.06S nanowires.",
author = "Eunsoon Oh and Choi, {Jung Ho} and Seong, {Han Kyu} and Choi, {Heon Jin}",
year = "2006",
month = "9",
day = "8",
doi = "10.1063/1.2243868",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

Optical properties of GaN and GaMnN nanowires grown on sapphire substrates. / Oh, Eunsoon; Choi, Jung Ho; Seong, Han Kyu; Choi, Heon Jin.

In: Applied Physics Letters, Vol. 89, No. 9, 092109, 08.09.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical properties of GaN and GaMnN nanowires grown on sapphire substrates

AU - Oh, Eunsoon

AU - Choi, Jung Ho

AU - Seong, Han Kyu

AU - Choi, Heon Jin

PY - 2006/9/8

Y1 - 2006/9/8

N2 - The authors discussed the photoluminescence (PL) spectra of GaN and GaMnN nanowires grown on sapphire substrates. Comparison of the excitonic PL peak energy with bulk GaN indicates that the strain of the nanowires is fully relaxed. For GaMnN nanowires, the redshift of the PL peak with increasing temperature was larger than that of the GaN nanowires, which was explained by redistribution of carriers into localization sites. The absence of Zeeman shift and circular polarization in GaMnN nanowires indicates that the exchange interaction between carriers and Mn2+ has to be at least one order of magnitude smaller than that in Cd0.94Mn0.06S nanowires.

AB - The authors discussed the photoluminescence (PL) spectra of GaN and GaMnN nanowires grown on sapphire substrates. Comparison of the excitonic PL peak energy with bulk GaN indicates that the strain of the nanowires is fully relaxed. For GaMnN nanowires, the redshift of the PL peak with increasing temperature was larger than that of the GaN nanowires, which was explained by redistribution of carriers into localization sites. The absence of Zeeman shift and circular polarization in GaMnN nanowires indicates that the exchange interaction between carriers and Mn2+ has to be at least one order of magnitude smaller than that in Cd0.94Mn0.06S nanowires.

UR - http://www.scopus.com/inward/record.url?scp=33748267264&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748267264&partnerID=8YFLogxK

U2 - 10.1063/1.2243868

DO - 10.1063/1.2243868

M3 - Article

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 092109

ER -