Optical properties of GaN and GaMnN nanowires grown on sapphire substrates

Eunsoon Oh, Jung Ho Choi, Han Kyu Seong, Heon Jin Choi

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Abstract

The authors discussed the photoluminescence (PL) spectra of GaN and GaMnN nanowires grown on sapphire substrates. Comparison of the excitonic PL peak energy with bulk GaN indicates that the strain of the nanowires is fully relaxed. For GaMnN nanowires, the redshift of the PL peak with increasing temperature was larger than that of the GaN nanowires, which was explained by redistribution of carriers into localization sites. The absence of Zeeman shift and circular polarization in GaMnN nanowires indicates that the exchange interaction between carriers and Mn2+ has to be at least one order of magnitude smaller than that in Cd0.94Mn0.06S nanowires.

Original languageEnglish
Article number092109
JournalApplied Physics Letters
Volume89
Issue number9
DOIs
Publication statusPublished - 2006 Sep 8

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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