Optical properties of green light-emitting diodes grown on r-plane sapphire substrates

Yong Gon Seo, Kwang Hyeon Baik, Hoo Young Song, Ji Su Son, Jihoon Kim, Kyunghwan Oh, Sung Min Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nonpolar a-plane light emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapour deposition (MOCVD) on r-plane sapphire substrates. An optical output power of 0.26 mW was obtained at a drive current of 20 mA and 1.27 mW at 100 mA, with peak emission wavelengths of 504.5 nm and 503.9 nm, respectively. The peak emission wavelength shift for the green LED was 4.4 nm when the injection current was changed from 5 to 100 mA.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Pages1215-1216
Number of pages2
Publication statusPublished - 2011 Dec 1
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
Duration: 2011 Aug 282011 Sep 1

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
CountryAustralia
CitySydney
Period11/8/2811/9/1

Fingerprint

Sapphire
Light emitting diodes
sapphire
light emitting diodes
Optical properties
optical properties
Wavelength
Organic chemicals
Substrates
wavelengths
Semiconductor quantum wells
metalorganic chemical vapor deposition
Chemical vapor deposition
quantum wells
injection
output
shift
Metals

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Seo, Y. G., Baik, K. H., Song, H. Y., Son, J. S., Kim, J., Oh, K., & Hwang, S. M. (2011). Optical properties of green light-emitting diodes grown on r-plane sapphire substrates. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 (pp. 1215-1216). (Optics InfoBase Conference Papers).
Seo, Yong Gon ; Baik, Kwang Hyeon ; Song, Hoo Young ; Son, Ji Su ; Kim, Jihoon ; Oh, Kyunghwan ; Hwang, Sung Min. / Optical properties of green light-emitting diodes grown on r-plane sapphire substrates. Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011. 2011. pp. 1215-1216 (Optics InfoBase Conference Papers).
@inproceedings{025427f450c64c1ebf5964c4d6d52686,
title = "Optical properties of green light-emitting diodes grown on r-plane sapphire substrates",
abstract = "Nonpolar a-plane light emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapour deposition (MOCVD) on r-plane sapphire substrates. An optical output power of 0.26 mW was obtained at a drive current of 20 mA and 1.27 mW at 100 mA, with peak emission wavelengths of 504.5 nm and 503.9 nm, respectively. The peak emission wavelength shift for the green LED was 4.4 nm when the injection current was changed from 5 to 100 mA.",
author = "Seo, {Yong Gon} and Baik, {Kwang Hyeon} and Song, {Hoo Young} and Son, {Ji Su} and Jihoon Kim and Kyunghwan Oh and Hwang, {Sung Min}",
year = "2011",
month = "12",
day = "1",
language = "English",
isbn = "9780977565771",
series = "Optics InfoBase Conference Papers",
pages = "1215--1216",
booktitle = "Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011",

}

Seo, YG, Baik, KH, Song, HY, Son, JS, Kim, J, Oh, K & Hwang, SM 2011, Optical properties of green light-emitting diodes grown on r-plane sapphire substrates. in Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011. Optics InfoBase Conference Papers, pp. 1215-1216, Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011, Sydney, Australia, 11/8/28.

Optical properties of green light-emitting diodes grown on r-plane sapphire substrates. / Seo, Yong Gon; Baik, Kwang Hyeon; Song, Hoo Young; Son, Ji Su; Kim, Jihoon; Oh, Kyunghwan; Hwang, Sung Min.

Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011. 2011. p. 1215-1216 (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Optical properties of green light-emitting diodes grown on r-plane sapphire substrates

AU - Seo, Yong Gon

AU - Baik, Kwang Hyeon

AU - Song, Hoo Young

AU - Son, Ji Su

AU - Kim, Jihoon

AU - Oh, Kyunghwan

AU - Hwang, Sung Min

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Nonpolar a-plane light emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapour deposition (MOCVD) on r-plane sapphire substrates. An optical output power of 0.26 mW was obtained at a drive current of 20 mA and 1.27 mW at 100 mA, with peak emission wavelengths of 504.5 nm and 503.9 nm, respectively. The peak emission wavelength shift for the green LED was 4.4 nm when the injection current was changed from 5 to 100 mA.

AB - Nonpolar a-plane light emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapour deposition (MOCVD) on r-plane sapphire substrates. An optical output power of 0.26 mW was obtained at a drive current of 20 mA and 1.27 mW at 100 mA, with peak emission wavelengths of 504.5 nm and 503.9 nm, respectively. The peak emission wavelength shift for the green LED was 4.4 nm when the injection current was changed from 5 to 100 mA.

UR - http://www.scopus.com/inward/record.url?scp=84893532402&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893532402&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84893532402

SN - 9780977565771

T3 - Optics InfoBase Conference Papers

SP - 1215

EP - 1216

BT - Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011

ER -

Seo YG, Baik KH, Song HY, Son JS, Kim J, Oh K et al. Optical properties of green light-emitting diodes grown on r-plane sapphire substrates. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011. 2011. p. 1215-1216. (Optics InfoBase Conference Papers).