Optical properties of green light-emitting diodes grown on r-plane sapphire substrates

Yong Gon Seo, Kwang Hyeon Baik, Hoo Young Song, Ji Su Son, Jihoon Kim, Kyunghwan Oh, Sung Min Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nonpolar a-plane light emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapour deposition (MOCVD) on r-plane sapphire substrates. An optical output power of 0.26 mW was obtained at a drive current of 20 mA and 1.27 mW at 100 mA, with peak emission wavelengths of 504.5 nm and 503.9 nm, respectively. The peak emission wavelength shift for the green LED was 4.4 nm when the injection current was changed from 5 to 100 mA.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Pages1215-1216
Number of pages2
Publication statusPublished - 2011 Dec 1
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
Duration: 2011 Aug 282011 Sep 1

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
CountryAustralia
CitySydney
Period11/8/2811/9/1

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Seo, Y. G., Baik, K. H., Song, H. Y., Son, J. S., Kim, J., Oh, K., & Hwang, S. M. (2011). Optical properties of green light-emitting diodes grown on r-plane sapphire substrates. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 (pp. 1215-1216). (Optics InfoBase Conference Papers).