@inproceedings{22290e471c3147bbb67d7aca4a8429bd,
title = "Optical properties of InGaN/GaN double heterostructures",
abstract = "The InGaN alloys have attracted a tremendous interest since they form the active region in blue light emitting diodes and laser diodes. But many hndamental optical properties of InGaN have not yet been fully understoud. Several researchers reported that the emission results mainly from recombination of excitons localized at certain potential minima originating from InxGa1-xN compositional fluctuations [1,2]. In this work, we have employed photoluminescence (PL), photoreflectance (PR). and time-resolved photoluminescence (TRPL) measurements to study the mechanisms of optical transitions in InGaNIGaN double heterostructures @Hs).",
author = "Ryu, {Mee Yi} and Shin, {Eun Joo} and Song, {Jae Ho} and Park, {Sung Woong} and Yu, {Phil Won} and Song, {Nam Woong} and Lee, {Joo In} and Dongho Kim and Oh, {Eun Soon} and Park, {Yong Jo} and Park, {Hyeong Soo} and Kim, {Tae Ill}",
note = "Publisher Copyright: {\textcopyright} 1999 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 ; Conference date: 30-08-1999 Through 03-09-1999",
year = "1999",
doi = "10.1109/CLEOPR.1999.817932",
language = "English",
series = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "983--984",
booktitle = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",
address = "United States",
}