Optical properties of InGaN/GaN double heterostructures

Mee Yi Ryu; Eun Joo Shin; Jae Ho Song; Sung Woong Park; Phil Won Yu; Nam Woong Song; Joo In Lee; Dongho Kim; Eun Soon Oh; Yong Jo Park; Hyeong Soo Park; Tae Ill Kim

doi:10.1109/CLEOPR.1999.817932

Optical properties of InGaN/GaN double heterostructures

Mee Yi Ryu, Eun Joo Shin, Jae Ho Song, Sung Woong Park, Phil Won Yu, Nam Woong Song, Joo In Lee, Dongho Kim, Eun Soon Oh, Yong Jo Park, Hyeong Soo Park, Tae Ill Kim

Department of Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The InGaN alloys have attracted a tremendous interest since they form the active region in blue light emitting diodes and laser diodes. But many hndamental optical properties of InGaN have not yet been fully understoud. Several researchers reported that the emission results mainly from recombination of excitons localized at certain potential minima originating from In_xGa_1-xN compositional fluctuations [1,2]. In this work, we have employed photoluminescence (PL), photoreflectance (PR). and time-resolved photoluminescence (TRPL) measurements to study the mechanisms of optical transitions in InGaNIGaN double heterostructures @Hs).

Original language	English
Title of host publication	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	983-984
Number of pages	2
ISBN (Electronic)	0780356616, 9780780356610
DOIs	https://doi.org/10.1109/CLEOPR.1999.817932
Publication status	Published - 1999 Jan 1
Event	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 - Seoul, Korea, Republic of Duration: 1999 Aug 30 → 1999 Sep 3

Publication series

Name	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Volume	3

Other

Other	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Country	Korea, Republic of
City	Seoul
Period	99/8/30 → 99/9/3

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Physics and Astronomy(all)

Cite this

Ryu, M. Y., Shin, E. J., Song, J. H., Park, S. W., Yu, P. W., Song, N. W., Lee, J. I., Kim, D., Oh, E. S., Park, Y. J., Park, H. S., & Kim, T. I. (1999). Optical properties of InGaN/GaN double heterostructures. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics (pp. 983-984). [817932] (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.1999.817932

Ryu, Mee Yi ; Shin, Eun Joo ; Song, Jae Ho ; Park, Sung Woong ; Yu, Phil Won ; Song, Nam Woong ; Lee, Joo In ; Kim, Dongho ; Oh, Eun Soon ; Park, Yong Jo ; Park, Hyeong Soo ; Kim, Tae Ill. / Optical properties of InGaN/GaN double heterostructures. CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc., 1999. pp. 983-984 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics).

@inproceedings{22290e471c3147bbb67d7aca4a8429bd,

title = "Optical properties of InGaN/GaN double heterostructures",

abstract = "The InGaN alloys have attracted a tremendous interest since they form the active region in blue light emitting diodes and laser diodes. But many hndamental optical properties of InGaN have not yet been fully understoud. Several researchers reported that the emission results mainly from recombination of excitons localized at certain potential minima originating from InxGa1-xN compositional fluctuations [1,2]. In this work, we have employed photoluminescence (PL), photoreflectance (PR). and time-resolved photoluminescence (TRPL) measurements to study the mechanisms of optical transitions in InGaNIGaN double heterostructures @Hs).",

author = "Ryu, {Mee Yi} and Shin, {Eun Joo} and Song, {Jae Ho} and Park, {Sung Woong} and Yu, {Phil Won} and Song, {Nam Woong} and Lee, {Joo In} and Dongho Kim and Oh, {Eun Soon} and Park, {Yong Jo} and Park, {Hyeong Soo} and Kim, {Tae Ill}",

year = "1999",

month = jan,

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doi = "10.1109/CLEOPR.1999.817932",

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pages = "983--984",

booktitle = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",

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Ryu, MY, Shin, EJ, Song, JH, Park, SW, Yu, PW, Song, NW, Lee, JI, Kim, D, Oh, ES, Park, YJ, Park, HS & Kim, TI 1999, Optical properties of InGaN/GaN double heterostructures. in CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics., 817932, CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics, vol. 3, Institute of Electrical and Electronics Engineers Inc., pp. 983-984, 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999, Seoul, Korea, Republic of, 99/8/30. https://doi.org/10.1109/CLEOPR.1999.817932

Optical properties of InGaN/GaN double heterostructures. / Ryu, Mee Yi; Shin, Eun Joo; Song, Jae Ho; Park, Sung Woong; Yu, Phil Won; Song, Nam Woong; Lee, Joo In; Kim, Dongho; Oh, Eun Soon; Park, Yong Jo; Park, Hyeong Soo; Kim, Tae Ill.

CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc., 1999. p. 983-984 817932 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Optical properties of InGaN/GaN double heterostructures

AU - Ryu, Mee Yi

AU - Shin, Eun Joo

AU - Song, Jae Ho

AU - Park, Sung Woong

AU - Yu, Phil Won

AU - Song, Nam Woong

AU - Lee, Joo In

AU - Kim, Dongho

AU - Oh, Eun Soon

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AU - Park, Hyeong Soo

AU - Kim, Tae Ill

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N2 - The InGaN alloys have attracted a tremendous interest since they form the active region in blue light emitting diodes and laser diodes. But many hndamental optical properties of InGaN have not yet been fully understoud. Several researchers reported that the emission results mainly from recombination of excitons localized at certain potential minima originating from InxGa1-xN compositional fluctuations [1,2]. In this work, we have employed photoluminescence (PL), photoreflectance (PR). and time-resolved photoluminescence (TRPL) measurements to study the mechanisms of optical transitions in InGaNIGaN double heterostructures @Hs).

AB - The InGaN alloys have attracted a tremendous interest since they form the active region in blue light emitting diodes and laser diodes. But many hndamental optical properties of InGaN have not yet been fully understoud. Several researchers reported that the emission results mainly from recombination of excitons localized at certain potential minima originating from InxGa1-xN compositional fluctuations [1,2]. In this work, we have employed photoluminescence (PL), photoreflectance (PR). and time-resolved photoluminescence (TRPL) measurements to study the mechanisms of optical transitions in InGaNIGaN double heterostructures @Hs).

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BT - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

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Ryu MY, Shin EJ, Song JH, Park SW, Yu PW, Song NW et al. Optical properties of InGaN/GaN double heterostructures. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc. 1999. p. 983-984. 817932. (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics). https://doi.org/10.1109/CLEOPR.1999.817932

Access to Document

10.1109/CLEOPR.1999.817932