Abstract
The InGaN alloys have attracted a tremendous interest since they form the active region in blue light emitting diodes and laser diodes. But many hndamental optical properties of InGaN have not yet been fully understoud. Several researchers reported that the emission results mainly from recombination of excitons localized at certain potential minima originating from InxGa1-xN compositional fluctuations [1,2]. In this work, we have employed photoluminescence (PL), photoreflectance (PR). and time-resolved photoluminescence (TRPL) measurements to study the mechanisms of optical transitions in InGaNIGaN double heterostructures @Hs).
Original language | English |
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Title of host publication | CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 983-984 |
Number of pages | 2 |
ISBN (Electronic) | 0780356616, 9780780356610 |
DOIs | |
Publication status | Published - 1999 |
Event | 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 - Seoul, Korea, Republic of Duration: 1999 Aug 30 → 1999 Sept 3 |
Publication series
Name | CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics |
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Volume | 3 |
Other
Other | 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 |
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Country/Territory | Korea, Republic of |
City | Seoul |
Period | 99/8/30 → 99/9/3 |
Bibliographical note
Publisher Copyright:© 1999 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Computer Networks and Communications
- Physics and Astronomy(all)