Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD

A. K. Viswanath, J. I. Lee, C. R. Lee, J. Y. Leem, Dongho Kim

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Photoluminescence (PL) properties of the residual shallow donors in GaN epitaxial layers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) were reported. Well-resolved free exciton transitions and luminescence due to the residual shallow donors were observed. The localization energy and binding energy of the neutral shallow donor were found to be 7 meV and 35 meV, respectively. In addition we identified a new ionized donor bound exciton center. Temperature dependence of the neutral donor bound exciton PL peak was found to follow the same variation as the band gap with temperature and Varshni's coefficients were obtained. The linewidth of donor bound exciton transition increases linearly with temperature and their interaction with the acoustic phonons was thought to be the only contribution to the linewidth. From the PL intensities the thermal activation energy of the neutral donor bound exciton was estimated as 9 meV. The ratio of the total free excitons' intensity to the total bound excitons' intensity increases with temperature, which shows that the donor bound excitons thermally dissociate releasing free excitons.

Original languageEnglish
Pages (from-to)551-556
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume67
Issue number5
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Organic Chemicals
Organic chemicals
Epitaxial layers
Excitons
Chemical vapor deposition
Optical properties
Metals
Photoluminescence
Electron transitions
Linewidth
LDS 751
Temperature
Phonons
Binding energy
Luminescence
Energy gap
Activation energy
Acoustics

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

@article{e288a54e5f9049a1b29c9820d9dadfa3,
title = "Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD",
abstract = "Photoluminescence (PL) properties of the residual shallow donors in GaN epitaxial layers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) were reported. Well-resolved free exciton transitions and luminescence due to the residual shallow donors were observed. The localization energy and binding energy of the neutral shallow donor were found to be 7 meV and 35 meV, respectively. In addition we identified a new ionized donor bound exciton center. Temperature dependence of the neutral donor bound exciton PL peak was found to follow the same variation as the band gap with temperature and Varshni's coefficients were obtained. The linewidth of donor bound exciton transition increases linearly with temperature and their interaction with the acoustic phonons was thought to be the only contribution to the linewidth. From the PL intensities the thermal activation energy of the neutral donor bound exciton was estimated as 9 meV. The ratio of the total free excitons' intensity to the total bound excitons' intensity increases with temperature, which shows that the donor bound excitons thermally dissociate releasing free excitons.",
author = "Viswanath, {A. K.} and Lee, {J. I.} and Lee, {C. R.} and Leem, {J. Y.} and Dongho Kim",
year = "1998",
month = "1",
day = "1",
doi = "10.1007/s003390050820",
language = "English",
volume = "67",
pages = "551--556",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "5",

}

Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD. / Viswanath, A. K.; Lee, J. I.; Lee, C. R.; Leem, J. Y.; Kim, Dongho.

In: Applied Physics A: Materials Science and Processing, Vol. 67, No. 5, 01.01.1998, p. 551-556.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD

AU - Viswanath, A. K.

AU - Lee, J. I.

AU - Lee, C. R.

AU - Leem, J. Y.

AU - Kim, Dongho

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Photoluminescence (PL) properties of the residual shallow donors in GaN epitaxial layers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) were reported. Well-resolved free exciton transitions and luminescence due to the residual shallow donors were observed. The localization energy and binding energy of the neutral shallow donor were found to be 7 meV and 35 meV, respectively. In addition we identified a new ionized donor bound exciton center. Temperature dependence of the neutral donor bound exciton PL peak was found to follow the same variation as the band gap with temperature and Varshni's coefficients were obtained. The linewidth of donor bound exciton transition increases linearly with temperature and their interaction with the acoustic phonons was thought to be the only contribution to the linewidth. From the PL intensities the thermal activation energy of the neutral donor bound exciton was estimated as 9 meV. The ratio of the total free excitons' intensity to the total bound excitons' intensity increases with temperature, which shows that the donor bound excitons thermally dissociate releasing free excitons.

AB - Photoluminescence (PL) properties of the residual shallow donors in GaN epitaxial layers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) were reported. Well-resolved free exciton transitions and luminescence due to the residual shallow donors were observed. The localization energy and binding energy of the neutral shallow donor were found to be 7 meV and 35 meV, respectively. In addition we identified a new ionized donor bound exciton center. Temperature dependence of the neutral donor bound exciton PL peak was found to follow the same variation as the band gap with temperature and Varshni's coefficients were obtained. The linewidth of donor bound exciton transition increases linearly with temperature and their interaction with the acoustic phonons was thought to be the only contribution to the linewidth. From the PL intensities the thermal activation energy of the neutral donor bound exciton was estimated as 9 meV. The ratio of the total free excitons' intensity to the total bound excitons' intensity increases with temperature, which shows that the donor bound excitons thermally dissociate releasing free excitons.

UR - http://www.scopus.com/inward/record.url?scp=0032206320&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032206320&partnerID=8YFLogxK

U2 - 10.1007/s003390050820

DO - 10.1007/s003390050820

M3 - Article

AN - SCOPUS:0032206320

VL - 67

SP - 551

EP - 556

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 5

ER -