Optical properties of self-assembled in As quantum-dot superluminescent diodes

Soon Il Jung, Ligu Yun, Joo In Lee, Il Ki Han

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report broad-band superluminescent diodes (SLDs) with different active layers using a selfassembled In As quantum-dot (QD) structure grown by using atomic layer molecular beam epitaxy. The photoluminescence and the electroluminescence measurements show a relationship between the emission properties and different activelayer structures of the QD-SLD These results explain the possibility of QD-based SLDs exceeding the performance of quantumwell-based SLDs.

Original languageEnglish
Pages (from-to)24-27
Number of pages4
JournalJournal of the Korean Physical Society
Volume55
Issue number1
DOIs
Publication statusPublished - 2009 Jul 1

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diodes
quantum dots
optical properties
atomic layer epitaxy
electroluminescence
molecular beam epitaxy
broadband
photoluminescence

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "We report broad-band superluminescent diodes (SLDs) with different active layers using a selfassembled In As quantum-dot (QD) structure grown by using atomic layer molecular beam epitaxy. The photoluminescence and the electroluminescence measurements show a relationship between the emission properties and different activelayer structures of the QD-SLD These results explain the possibility of QD-based SLDs exceeding the performance of quantumwell-based SLDs.",
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Optical properties of self-assembled in As quantum-dot superluminescent diodes. / Jung, Soon Il; Yun, Ligu; Lee, Joo In; Han, Il Ki.

In: Journal of the Korean Physical Society, Vol. 55, No. 1, 01.07.2009, p. 24-27.

Research output: Contribution to journalArticle

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AU - Han, Il Ki

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AB - We report broad-band superluminescent diodes (SLDs) with different active layers using a selfassembled In As quantum-dot (QD) structure grown by using atomic layer molecular beam epitaxy. The photoluminescence and the electroluminescence measurements show a relationship between the emission properties and different activelayer structures of the QD-SLD These results explain the possibility of QD-based SLDs exceeding the performance of quantumwell-based SLDs.

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