Optical properties of ZnSxSe1-x (x < 0.18) random and ordered alloys grown by metalorganic atomic layer epitaxy

J. H. Song, E. D. Sim, K. S. Baek, Soo Kyung Chang

Research output: Contribution to journalConference article

19 Citations (Scopus)

Abstract

ZnSxSe1-x (x < 0.18) random alloy and ordered alloy were grown on GaAs(001) substrate by metalorganic chemical vapor deposition in ALE mode (MOCVD-ALE) using dimethylzinc, H2Se and H2S as source materials. In order to investigate the strain effect of ZnSxSe1-x epilayers, heavy hole (hhx) and light hole (lhx) exciton peaks in PL spectra were monitored as a function of S composition. The identification of hhx and lhx peaks was confirmed by photoreflectance spectroscopy. The S composition at which lattice matching took place was determined to be 5.6%. The full-width at half-maximum (FWHM) of hhx peak increased and deep-level emission appeared in the PL spectra as the S composition increased. For the ordered alloy, the FWHM of exciton peak was narrower than that for the random alloy and the deep level emission was suppressed. An analysis of broadening of the exciton line show that the optical properties of random alloy are influenced by alloy potential and that the alloy potential fluctuation is significantly constrained in the ordered alloy.

Original languageEnglish
Pages (from-to)460-464
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

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Atomic layer epitaxy
atomic layer epitaxy
Optical properties
optical properties
Excitons
excitons
Full width at half maximum
Chemical analysis
Epilayers
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Spectroscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

@article{82a3be01d4a54724bd915323814bb261,
title = "Optical properties of ZnSxSe1-x (x < 0.18) random and ordered alloys grown by metalorganic atomic layer epitaxy",
abstract = "ZnSxSe1-x (x < 0.18) random alloy and ordered alloy were grown on GaAs(001) substrate by metalorganic chemical vapor deposition in ALE mode (MOCVD-ALE) using dimethylzinc, H2Se and H2S as source materials. In order to investigate the strain effect of ZnSxSe1-x epilayers, heavy hole (hhx) and light hole (lhx) exciton peaks in PL spectra were monitored as a function of S composition. The identification of hhx and lhx peaks was confirmed by photoreflectance spectroscopy. The S composition at which lattice matching took place was determined to be 5.6{\%}. The full-width at half-maximum (FWHM) of hhx peak increased and deep-level emission appeared in the PL spectra as the S composition increased. For the ordered alloy, the FWHM of exciton peak was narrower than that for the random alloy and the deep level emission was suppressed. An analysis of broadening of the exciton line show that the optical properties of random alloy are influenced by alloy potential and that the alloy potential fluctuation is significantly constrained in the ordered alloy.",
author = "Song, {J. H.} and Sim, {E. D.} and Baek, {K. S.} and Chang, {Soo Kyung}",
year = "2000",
month = "6",
day = "2",
doi = "10.1016/S0022-0248(00)00130-5",
language = "English",
volume = "214",
pages = "460--464",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

Optical properties of ZnSxSe1-x (x < 0.18) random and ordered alloys grown by metalorganic atomic layer epitaxy. / Song, J. H.; Sim, E. D.; Baek, K. S.; Chang, Soo Kyung.

In: Journal of Crystal Growth, Vol. 214, 02.06.2000, p. 460-464.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Optical properties of ZnSxSe1-x (x < 0.18) random and ordered alloys grown by metalorganic atomic layer epitaxy

AU - Song, J. H.

AU - Sim, E. D.

AU - Baek, K. S.

AU - Chang, Soo Kyung

PY - 2000/6/2

Y1 - 2000/6/2

N2 - ZnSxSe1-x (x < 0.18) random alloy and ordered alloy were grown on GaAs(001) substrate by metalorganic chemical vapor deposition in ALE mode (MOCVD-ALE) using dimethylzinc, H2Se and H2S as source materials. In order to investigate the strain effect of ZnSxSe1-x epilayers, heavy hole (hhx) and light hole (lhx) exciton peaks in PL spectra were monitored as a function of S composition. The identification of hhx and lhx peaks was confirmed by photoreflectance spectroscopy. The S composition at which lattice matching took place was determined to be 5.6%. The full-width at half-maximum (FWHM) of hhx peak increased and deep-level emission appeared in the PL spectra as the S composition increased. For the ordered alloy, the FWHM of exciton peak was narrower than that for the random alloy and the deep level emission was suppressed. An analysis of broadening of the exciton line show that the optical properties of random alloy are influenced by alloy potential and that the alloy potential fluctuation is significantly constrained in the ordered alloy.

AB - ZnSxSe1-x (x < 0.18) random alloy and ordered alloy were grown on GaAs(001) substrate by metalorganic chemical vapor deposition in ALE mode (MOCVD-ALE) using dimethylzinc, H2Se and H2S as source materials. In order to investigate the strain effect of ZnSxSe1-x epilayers, heavy hole (hhx) and light hole (lhx) exciton peaks in PL spectra were monitored as a function of S composition. The identification of hhx and lhx peaks was confirmed by photoreflectance spectroscopy. The S composition at which lattice matching took place was determined to be 5.6%. The full-width at half-maximum (FWHM) of hhx peak increased and deep-level emission appeared in the PL spectra as the S composition increased. For the ordered alloy, the FWHM of exciton peak was narrower than that for the random alloy and the deep level emission was suppressed. An analysis of broadening of the exciton line show that the optical properties of random alloy are influenced by alloy potential and that the alloy potential fluctuation is significantly constrained in the ordered alloy.

UR - http://www.scopus.com/inward/record.url?scp=0033688237&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033688237&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)00130-5

DO - 10.1016/S0022-0248(00)00130-5

M3 - Conference article

VL - 214

SP - 460

EP - 464

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -