Optical transitions in InGaN/GaN double heterostructures

Mee Yi Ryu; Phil Won Yu; Eun Joo Shin; Nam Woong Song; Joo In Lee; Dongho Kim; Eun Soon Oh; Yong Jo Park; Hyeong Soo Park; Tae Kim

Optical transitions in InGaN/GaN double heterostructures

Mee Yi Ryu, Phil Won Yu, Eun Joo Shin, Nam Woong Song, Joo In Lee, Dongho Kim, Eun Soon Oh, Yong Jo Park, Hyeong Soo Park, Tae Kim

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We present the results of the optical transitions in InGaN/GaN double heterostructures (DHs) grown by metal-organic chemical vapor deposition. The emission intensities (I _emi) of the main PL peaks increase superlinearly with excitation intensity (I _exc), following a power-law form, I _emi ∝ I _exc ^β. To study the recombination kinetics of InGaN/GaN DHs, we have employed the time-resolved photoluminescence (PL) measurements with various delay times and the PL decay times as a function of emission energy.

Original language	English
Pages (from-to)	S1021-S1024
Journal	Journal of the Korean Physical Society
Volume	35
Issue number	SUPPL. 4
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

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title = "Optical transitions in InGaN/GaN double heterostructures",

abstract = "We present the results of the optical transitions in InGaN/GaN double heterostructures (DHs) grown by metal-organic chemical vapor deposition. The emission intensities (I emi) of the main PL peaks increase superlinearly with excitation intensity (I exc), following a power-law form, I emi ∝ I exc β. To study the recombination kinetics of InGaN/GaN DHs, we have employed the time-resolved photoluminescence (PL) measurements with various delay times and the PL decay times as a function of emission energy.",

author = "Ryu, {Mee Yi} and Yu, {Phil Won} and Shin, {Eun Joo} and Song, {Nam Woong} and Lee, {Joo In} and Dongho Kim and Oh, {Eun Soon} and Park, {Yong Jo} and Park, {Hyeong Soo} and Tae Kim",

year = "1999",

language = "English",

volume = "35",

pages = "S1021--S1024",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL. 4",

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TY - JOUR

T1 - Optical transitions in InGaN/GaN double heterostructures

AU - Ryu, Mee Yi

AU - Yu, Phil Won

AU - Shin, Eun Joo

AU - Song, Nam Woong

AU - Lee, Joo In

AU - Kim, Dongho

AU - Oh, Eun Soon

AU - Park, Yong Jo

AU - Park, Hyeong Soo

AU - Kim, Tae

PY - 1999

Y1 - 1999

N2 - We present the results of the optical transitions in InGaN/GaN double heterostructures (DHs) grown by metal-organic chemical vapor deposition. The emission intensities (I emi) of the main PL peaks increase superlinearly with excitation intensity (I exc), following a power-law form, I emi ∝ I exc β. To study the recombination kinetics of InGaN/GaN DHs, we have employed the time-resolved photoluminescence (PL) measurements with various delay times and the PL decay times as a function of emission energy.

AB - We present the results of the optical transitions in InGaN/GaN double heterostructures (DHs) grown by metal-organic chemical vapor deposition. The emission intensities (I emi) of the main PL peaks increase superlinearly with excitation intensity (I exc), following a power-law form, I emi ∝ I exc β. To study the recombination kinetics of InGaN/GaN DHs, we have employed the time-resolved photoluminescence (PL) measurements with various delay times and the PL decay times as a function of emission energy.

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M3 - Article

AN - SCOPUS:0033260948

SN - 0374-4884

VL - 35

SP - S1021-S1024

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. 4

ER -

Optical transitions in InGaN/GaN double heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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