Optical transitions in InGaN/GaN double heterostructures

Mee Yi Ryu, Phil Won Yu, Eun Joo Shin, Nam Woong Song, Joo In Lee, Dongho Kim, Eun Soon Oh, Yong Jo Park, Hyeong Soo Park, Tae Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present the results of the optical transitions in InGaN/GaN double heterostructures (DHs) grown by metal-organic chemical vapor deposition. The emission intensities (I emi) of the main PL peaks increase superlinearly with excitation intensity (I exc), following a power-law form, I emi ∝ I exc β. To study the recombination kinetics of InGaN/GaN DHs, we have employed the time-resolved photoluminescence (PL) measurements with various delay times and the PL decay times as a function of emission energy.

Original languageEnglish
Pages (from-to)S1021-S1024
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 4
Publication statusPublished - 1999 Dec 1

Fingerprint

optical transition
photoluminescence
metalorganic chemical vapor deposition
time lag
kinetics
decay
excitation
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Ryu, M. Y., Yu, P. W., Shin, E. J., Song, N. W., Lee, J. I., Kim, D., ... Kim, T. (1999). Optical transitions in InGaN/GaN double heterostructures. Journal of the Korean Physical Society, 35(SUPPL. 4), S1021-S1024.
Ryu, Mee Yi ; Yu, Phil Won ; Shin, Eun Joo ; Song, Nam Woong ; Lee, Joo In ; Kim, Dongho ; Oh, Eun Soon ; Park, Yong Jo ; Park, Hyeong Soo ; Kim, Tae. / Optical transitions in InGaN/GaN double heterostructures. In: Journal of the Korean Physical Society. 1999 ; Vol. 35, No. SUPPL. 4. pp. S1021-S1024.
@article{14864045222f4546a6d7f7a3e473d358,
title = "Optical transitions in InGaN/GaN double heterostructures",
abstract = "We present the results of the optical transitions in InGaN/GaN double heterostructures (DHs) grown by metal-organic chemical vapor deposition. The emission intensities (I emi) of the main PL peaks increase superlinearly with excitation intensity (I exc), following a power-law form, I emi ∝ I exc β. To study the recombination kinetics of InGaN/GaN DHs, we have employed the time-resolved photoluminescence (PL) measurements with various delay times and the PL decay times as a function of emission energy.",
author = "Ryu, {Mee Yi} and Yu, {Phil Won} and Shin, {Eun Joo} and Song, {Nam Woong} and Lee, {Joo In} and Dongho Kim and Oh, {Eun Soon} and Park, {Yong Jo} and Park, {Hyeong Soo} and Tae Kim",
year = "1999",
month = "12",
day = "1",
language = "English",
volume = "35",
pages = "S1021--S1024",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL. 4",

}

Ryu, MY, Yu, PW, Shin, EJ, Song, NW, Lee, JI, Kim, D, Oh, ES, Park, YJ, Park, HS & Kim, T 1999, 'Optical transitions in InGaN/GaN double heterostructures', Journal of the Korean Physical Society, vol. 35, no. SUPPL. 4, pp. S1021-S1024.

Optical transitions in InGaN/GaN double heterostructures. / Ryu, Mee Yi; Yu, Phil Won; Shin, Eun Joo; Song, Nam Woong; Lee, Joo In; Kim, Dongho; Oh, Eun Soon; Park, Yong Jo; Park, Hyeong Soo; Kim, Tae.

In: Journal of the Korean Physical Society, Vol. 35, No. SUPPL. 4, 01.12.1999, p. S1021-S1024.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical transitions in InGaN/GaN double heterostructures

AU - Ryu, Mee Yi

AU - Yu, Phil Won

AU - Shin, Eun Joo

AU - Song, Nam Woong

AU - Lee, Joo In

AU - Kim, Dongho

AU - Oh, Eun Soon

AU - Park, Yong Jo

AU - Park, Hyeong Soo

AU - Kim, Tae

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We present the results of the optical transitions in InGaN/GaN double heterostructures (DHs) grown by metal-organic chemical vapor deposition. The emission intensities (I emi) of the main PL peaks increase superlinearly with excitation intensity (I exc), following a power-law form, I emi ∝ I exc β. To study the recombination kinetics of InGaN/GaN DHs, we have employed the time-resolved photoluminescence (PL) measurements with various delay times and the PL decay times as a function of emission energy.

AB - We present the results of the optical transitions in InGaN/GaN double heterostructures (DHs) grown by metal-organic chemical vapor deposition. The emission intensities (I emi) of the main PL peaks increase superlinearly with excitation intensity (I exc), following a power-law form, I emi ∝ I exc β. To study the recombination kinetics of InGaN/GaN DHs, we have employed the time-resolved photoluminescence (PL) measurements with various delay times and the PL decay times as a function of emission energy.

UR - http://www.scopus.com/inward/record.url?scp=0033260948&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033260948&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033260948

VL - 35

SP - S1021-S1024

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL. 4

ER -

Ryu MY, Yu PW, Shin EJ, Song NW, Lee JI, Kim D et al. Optical transitions in InGaN/GaN double heterostructures. Journal of the Korean Physical Society. 1999 Dec 1;35(SUPPL. 4):S1021-S1024.